Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of doped single crystal SnSe

A technology of single crystal and Kidman method, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of low thermoelectric figure of merit ZT, unsatisfactory energy conversion efficiency, high cost of raw materials, etc., and achieve excellent The effect of thermoelectric figure of merit, excellent average thermoelectric figure of merit, and low cost of raw materials

Inactive Publication Date: 2016-08-31
CHONGQING UNIV
View PDF3 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a preparation method of doped single crystal SnSe, aiming to solve the common problems of low thermoelectric figure of merit ZT, high cost of raw materials and unsatisfactory energy conversion efficiency in current thermoelectric materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of doped single crystal SnSe
  • Preparation method of doped single crystal SnSe
  • Preparation method of doped single crystal SnSe

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0025] The application principle of the present invention will be further described below in conjunction with the accompanying drawings.

[0026] like figure 1 Shown:

[0027] A method for preparing a doped SnSe single crystal, the method for preparing a doped SnSe single crystal comprises the following steps:

[0028] S101: Prepare the raw materials according to a certain raw material ratio and seal them in a quartz tube, and place them in a furnace for sample growth;

[0029] S102: heating the furnace to a certain temperature, and keeping it warm for a period of time to ensure that the raw materials are fully melted; ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a doped single crystal SnSe. The method comprises the following steps: sealing prepared raw materials into a quartz tube and putting the quartz tube into a furnace with a temperature gradient; raising a furnace temperature to a certain temperature; keeping the heat at the temperature for a period of time and sufficiently fusing the raw materials; and slowly crystallizing the fused raw materials from one end by adopting a Bridgman method and utilizing the temperature gradient in the furnace and a relative position change between a furnace cavity and the raw materials, so as to finally prepare the doped SnSe single crystal. The doped SnSe single crystal prepared by the invention is large in size and excellent in thermoelectric performance; a low-temperature-region ZT value is improved by near one order of magnitude relative to an undoped sample; and the preparation method has the advantages of low raw material cost and environmental friendliness so that the preparation method has a very good actual application prospect.

Description

technical field [0001] The invention belongs to the technical field of single crystal preparation, and in particular relates to a preparation method of doped single crystal SnSe. Background technique [0002] The development of human society is accompanied by the increase of energy consumption. Fossil fuels are decreasing day by day as non-renewable energy sources. The development of new renewable energy sources has become a hot issue in the 21st century. Thermoelectric materials (thermoelectric materials) are functional materials that utilize the transport and interaction of carriers and phonons in solids to achieve direct mutual conversion between thermal energy and electrical energy. Thermoelectric power generation and refrigeration devices made of thermoelectric materials have the advantages of no pollution, no noise, no wear, small size, fast response, easy maintenance, safety and reliability, etc., and have extremely broad application prospects. In addition, thermoele...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B15/00
CPCC30B29/46C30B15/00
Inventor 周小元王国玉彭坤岭
Owner CHONGQING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com