Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-dimensional micro/nano electromechanical switch and preparation method thereof

A nano-electromechanical and three-dimensional technology, applied in the field of three-dimensional micro/nano-electromechanical switches and their preparation, can solve the problems of high processing costs, restrictions on the practical commercial application of three-dimensional micro-nano switches, high closing voltage, etc., and achieve short production cycle and high convenience. Integrated, low closing voltage effect

Active Publication Date: 2016-06-01
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF11 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] At present, the main problems restricting MEMS / NEMS switches are high closing voltage and high processing costs, which greatly limit the practical commercial application of three-dimensional micro-nano switches.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional micro/nano electromechanical switch and preparation method thereof
  • Three-dimensional micro/nano electromechanical switch and preparation method thereof
  • Three-dimensional micro/nano electromechanical switch and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0060] The present invention will be described in detail below with reference to the drawings and specific embodiments.

[0061] The three-dimensional micro / nano electromechanical switch of the present embodiment, such as figure 1 As shown, a substrate 1 is included, two substrate electrodes 3 are arranged on the insulating layer 2 , and micro-nano wires 4 are vertically connected to each substrate electrode 3 .

[0062] In this embodiment, the substrate 1 and the insulating layer 2 together constitute an insulating substrate.

[0063] The shape of the micro-nanowire 4 is as shown in Figure 2, which can be linear, also can be a ring structure, and can also be a spiral type, which can be selected according to the specific application during use, and the shape of the two micro-nanowires in the same electromechanical switch Can be different.

[0064] The two micro-nanowires 4 in the three-dimensional micro / nano-electromechanical switch shown in Figure 2(a) both have a ring stru...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a three-dimensional micro / nano electromechanical switch and a preparation method thereof. The three-dimensional micro / nano electromechanical switch comprises an insulating base, wherein the insulating base is provided with two base electrodes; each base electrode is vertically connected with a micro / nano wire; and the top end of each micro / nano wire is taken as a switch contact. The preparation method comprises the following steps: (1) preparing two isolated base electrodes on the base with an insulating layer; and (2) preparing the micro / nano wires on various base electrodes by an electrochemical deposition method to obtain the three-dimensional micro / nano electromechanical switch. The three-dimensional micro / nano electromechanical switch disclosed by the invention is relatively low in closing voltage and small in device size; highly integration is convenient to achieve; the preparation method is simple, easy to achieve and short in preparation cycle; and high-freedom three-dimensional micro / nano wires can be fabricated.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a three-dimensional micro / nano electromechanical switch and a preparation method thereof. Background technique [0002] Micro-nano electromechanical (MEMS / NEMS) switches rely on the mechanical displacement of cantilever beams, comb teeth or thin film structures to realize the on-off control of electrical or radio frequency signals. High efficiency, fast response, accuracy, repeated use frequency, and high reliability are the special requirements of modern circuit systems for switches. Compared with traditional FET and PIN diode switches, low loss, low power consumption, and high isolation are the main features of MEMS / NEMS switches. The emergence of MEMS switches provides a strong guarantee for the development of high-tech circuit systems, and it has broad application prospects in circuit control in communication, sensing and other fields. [0003] With the developm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01H59/00H01H11/00
Inventor 郭建军易志然许高杰
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com