Reactant gas delivery device and chemical vapor deposition or epitaxial layer growth reactor

Abstract

The invention discloses a gas delivery device for a chemical vapor deposition or epitaxial layer growth reactor. The gas delivery device comprises an isolation plate and a gas delivery plate. A first gas diffusion region is formed above the isolation plate. A second gas diffusion region is formed between the isolation plate and the gas delivery plate. Longitudinal long first gas diffusion grooves and longitudinal long second gas diffusion grooves which are parallel to one another are alternately formed in the upper surface of the gas delivery plate. The groove bottom of each first gas diffusion groove is provided with a first gas outflow channel used for delivering gas in the first gas diffusion region to the treatment region. The groove bottom of each second gas diffusion groove is provided with a second gas outflow channel used for delivering gas in the second gas diffusion region to the treatment region. The lower surface, between an outlet of each first gas outflow channel and an outlet of the corresponding adjacent second gas outflow channel, of the gas delivery plate is in an arc shape or pointed-cone shape.

Description

technical field [0001] The present invention relates to the manufacture of semiconductor devices, in particular to a device for growing epitaxial layers or performing chemical vapor deposition on substrates such as substrates. Background technique [0002] During the production process of growing epitaxial layers or performing chemical vapor deposition on substrates such as substrates, the design of the reactor is critical. Reactors in the prior art come in a variety of designs, including: horizontal reactors, in which the substrates are mounted at an angle to the incoming reactant gases; planetary rotating horizontal reactors, In this reactor, the reaction gas is passed through the substrate horizontally; and in the vertical reactor, when the reaction gas is injected downward on the substrate, the substrate is placed on the substrate carrier in the reaction chamber and Relatively high speed rotation. This high-speed rotating vertical reactor is one of the most commerciall...

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Problems solved by technology

[0004] In the prior art, most gas conveying devices are designed to use gas conveying pipes to realize the conveying of different reaction gases, welding and processing many components together not only increases the difficulty of processing, but also because of the distance between the gas conveying pipes and different gases The sealing effect between the plates is not good, which increases the risk of gas leakage; in other designs, a gas delivery device is provided, which is welded by welding a plurality of hollow elongated tubular gas distribution elements side by side and at intervals At the same time, components such as gas diffusers and cooling pipes are welded under the long tubular gas distribution components, but these welding components are very easy to cause water leakage and air leakage, and it is impossible to ensure that the components of each air inlet are exactly the same during welding , therefore, the shape and size of each gas delivery device cannot be guaranteed to be consistent. In addition, after a process, the gas delivery device is easily deformed, resulting in different process effects for different substrates in the same reaction chamber.

If the processing parameters of each gas delivery device cannot be guaranteed to be exactly the same, when placed in the reactor, the processing technology of different reactors will be different, which will seriously affect the uniformity of substrate processing in different reactors, resulting in a Processing results vary between batches of substrates (chamber-to-chamber)

In addition, in these designs, there is also the problem of non-uniform gas delivery to the treatment area due to differences in gas diffusion rates between the tubular gas distribution elements

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