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Monocrystalline silicon growth oxygen content control technology

A control technology, a technology of single crystal silicon, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of difficult to obtain high magnetic field strength, large power consumption, huge equipment investment, etc.

Active Publication Date: 2016-04-20
CHONGQING ADVANCED SILICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantage of magnetic field crystal pulling is that the equipment investment is huge, the power consumption is large, and it is difficult to obtain high magnetic field strength.

Method used

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  • Monocrystalline silicon growth oxygen content control technology
  • Monocrystalline silicon growth oxygen content control technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Growth diameter of 2 inches of single crystal silicon. The outer diameter of the quartz crucible is 105 mm, the speed of the crucible is 8 rpm, the width of the oscillating wave input ring is 14 mm, and the weight is 5 kg. After the polysilicon is completely melted, stand still for 3h. When the surface of the silicon liquid is still, the melt is scanned at a frequency of 1000-5000 Hz with a fixed amplitude, and no resonance frequency is found. Select the frequency of the oscillation wave to be 5000Hz, the amplitude to be 1.0μm, and the oscillation power P to be 0.25W / cm 2 , initial excitation force F 0 for 5t. Before the start of isometric growth after the crystal shoulder is turned, the oscillator wave input is turned on, and the crystal isodiametric growth starts at the same time. During the crystal growth process, according to equations (5) to (8), the excitation force F is continuously adjusted and reduced as the crystal grows, and the input of the oscillatory w...

Embodiment 2

[0039] Growth diameter of 2 inches of single crystal silicon. The outer diameter of the quartz crucible is 155 mm, the speed of the crucible is 6 rpm, the width of the oscillating wave input ring is 17 mm, and the weight is 8 kg. After the polysilicon is completely melted, stand still for 3h. When the surface of the silicon liquid is still, the melt is scanned at a frequency of 1000-5000 Hz with a fixed amplitude, and no resonance frequency is found. Select the frequency of the oscillation wave to be 1360Hz, the amplitude to be 6.0μm, and the oscillation power P to be 0.67W / cm 2 , initial excitation force F 0 for 4t. Before the start of isometric growth after the crystal shoulder is turned, the oscillator wave input is turned on, and the crystal isodiametric growth starts at the same time. During the crystal growth process, according to equations (5) to (8), the excitation force F is continuously adjusted and reduced as the crystal grows, and the input of the oscillatory w...

Embodiment 3

[0042] Growth diameter of 4 inches of single crystal silicon. The outer diameter of the quartz crucible is 210 mm, the speed of the crucible is 8 rpm, the width of the oscillating wave input ring is 28 mm, and the weight is 11 kg. After the polysilicon is completely melted, stand still for 3h. When the surface of the silicon liquid is still, the melt is scanned at a frequency of 1000-5000 Hz with a fixed amplitude, and no resonance frequency is found. Select the oscillation wave frequency as 3260Hz, the amplitude as 2.0μm, and the oscillation power P as 0.43W / cm 2 , initial excitation force F 0 It is 9t. Before the start of isometric growth after the crystal shoulder is turned, the oscillator wave input is turned on, and the crystal isodiametric growth starts at the same time. During the crystal growth process, according to equations (5) to (8), the excitation force F is continuously adjusted and reduced as the crystal grows, and the input of the oscillatory wave is stoppe...

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Abstract

The invention belongs to a monocrystalline silicon growth oxygen content control technology. An annular oscillation source matched with and same as a crucible in outer diameter and shape is adopted at the bottom of the quartz crucible, the oscillation source ring generates a longitudinal sine oscillation wave which is propagated to a melt from the bottom of the crucible, and the propagation direction is the linear propagation in the vertical direction. The oscillation wave is propagated to the melt, generates a cavitation action, a stirring action and a longitudinal flowing action to the high temperature silicon melt around the crucible, and forms upward flowing in a region close to the crucible wall, thus accelerating the flowing of oxygen in a high concentration region to the free surface of the melt, reducing dissolvability of Si-O gas in the melt, promoting the violation of the Si-O at the melt surface and further achieving the action of controlling the oxygen concentration in the monocrystalline silicon.

Description

technical field [0001] The present invention relates to a growth technology of single crystal silicon with low oxygen content, in particular to the control of oxygen content in molten silicon, in particular to the use of high-frequency oscillation technology to oscillate molten silicon to reduce the solubility of oxygen in molten silicon . Background technique [0002] In the manufacturing process of monocrystalline silicon, the Czochralski method (Czochralski, abbreviated as CZ) is most commonly used. In the Czochralski method, polycrystalline silicon is filled in a quartz glass crucible (also called a quartz crucible), and then heated and melted to form silicon Melt, the seed crystal is immersed in the silicon melt and then rotated upwards to pull it, and the silicon solidifies and crystallizes at the interface between the seed crystal and the molten solution to form a single crystal silicon rod (ingot). [0003] Oxygen is the impurity with the highest content and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B30/06C30B29/06
CPCC30B15/20C30B29/06C30B30/06
Inventor 张俊宝宋洪伟
Owner CHONGQING ADVANCED SILICON TECH CO LTD
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