Nanosilicon thin-film multi-junction solar cell

Abstract

The invention discloses a nanosilicon thin-film multi-junction solar cell which comprises a positive electrode layer and a negative electrode layer. A plurality of P-I-N junctions are arranged between an anode layer and a cathode layer as a photoelectric conversion layer. Each P-I-N junction is obtained through successively laminating a P-type silicon thin-film layer, an intrinsic silicon film absorbing layer and an N-type silicon thin-film layer. A coupling connecting layer is arranged between two adjacent P-I-N junctions. In a direction from a top cell to a bottom cell, the thickness and the refractive index of the intrinsic silicon film absorbing layer gradually increase according to a geometric gradient, thereby introducing photons to advance, reducing surface reflection loss, successively reducing band gap widths gradually, improving absorption to a solar spectrum, reducing light-induced degradation, and realizing effective conversion efficiency improvement of the solar cell.

Description

technical field [0001] The invention relates to a solar cell technology, in particular to a multi-junction solar cell with a nano-silicon thin film. Background technique [0002] The optical bandgap width of amorphous silicon is 1.7eV, which makes the material itself insensitive to the long-wavelength region of the solar radiation spectrum, which limits the conversion efficiency of amorphous silicon solar cells. In addition, its photoelectric efficiency will decay with the continuation of the illumination time, which is the so-called light-induced degradation S-W effect, making the battery performance unstable. [0003] Existing nano-silicon thin-film solar cells cannot fully absorb solar light energy in different bands, have low power conversion efficiency, large light-induced attenuation, and low open-circuit voltage and fill factor of nano-silicon solar cells. [0004] Amorphous silicon thin-film multi-junction solar cells are considered to be a stable, high-efficiency, ...

AI Technical Summary

Problems solved by technology

[0011] The purpose of the present invention is to solve the problems of low conversion efficiency, large light-induced attenuation and low open-circuit voltage and fill factor of nano-silicon solar cells in traditional silicon thin-film solar cells, and provides a nano-silicon thin-film multi-junction solar cell to improve existing cells The structure and preparation process overcome the shortcomings and deficiencies in the prior art to achieve the improvement of battery efficiency

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