Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memristor simulator circuit based on digital potentiometer

A technology of digital potentiometer and memristor, which is applied to digital memory information, logic circuits with multiple states, logic circuits, etc., can solve the problems of short memory time and difficulty in accurately simulating the non-missing memory characteristics of memristors. To achieve the effect of convenient debugging, simple structure and good simulation

Inactive Publication Date: 2016-03-30
HANGZHOU DIANZI UNIV
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Few memory emulators have short memory time, and it is difficult to accurately simulate the non-lost memory characteristics of actual memristors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memristor simulator circuit based on digital potentiometer
  • Memristor simulator circuit based on digital potentiometer
  • Memristor simulator circuit based on digital potentiometer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0016] The basic characteristic equation of HP Labs TiO2 memristor is:

[0017] u ( t ) = M ( t ) i ( t ) = [ R o n w ( t ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a memristor simulator circuit based on a digital potentiometer. According to a mathematical model of a TiO2 memristor of an HP (Hewlett-Packard) laboratory, discrete analysis is performed on the mathematical model, a discrete model of the mathematical model of the memristor is obtained, and according to the obtained discrete mathematical model, the memristor model of the HP laboratory is realized by using a control circuit and the digital potentiometer. The memristor simulator provided by the invention comprises the digital potentiometer, a high quality instrumentation differential amplifier and a singlechip. Under the condition that a single isolated memristor device of a nanoscale cannot be obtained, the memristor simulator provided by the invention can replace a practical TiO2 memristor to perform design and experiment of relevant circuits of the memristor, and can also be used for other fields in need of the memristor.

Description

technical field [0001] The invention belongs to the field of novel circuit devices, and relates to a memristor simulator circuit based on a digital potentiometer. Background technique [0002] Memristor is a non-linear resistance with memory, also known as memristor, which is the fourth circuit element after resistance, capacitance and inductance. The memristor was first proposed by Chua in 1971, but it was not until 2008 that the existence of an actual memristor, the TiO2 memristor, was discovered by Hewlett Packard Laboratories in the United States. Memristors have memory, synaptic properties and nanoscale, and have great application potential in non-volatile memory, neural networks and other fields. However, due to the difficulty and high cost of nanotechnology, the memristor has not yet entered the market as an actual component. It is of great significance to design a memristor simulator and use it to replace the actual memristor for experimental and applied research; e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/00G11C13/00
CPCG11C13/0009H03K19/0002
Inventor 王光义袁方王晋彭存建张祥
Owner HANGZHOU DIANZI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com