Silicon substrate suspended led optical waveguide integrated photonic device and its preparation method

Abstract

The invention provides a silicon substrate suspended LED optical waveguide integrated photonic device and a preparation method thereof. The device uses anisotropic silicon etching technology to peel off and remove the silicon substrate layer and the epitaxial buffer layer under the device structure to obtain a suspended nitride thin film LED The optical waveguide integrated photonic device further adopts the nitride back thinning etching technology to obtain an ultra-thin silicon substrate suspended LED optical waveguide integrated photonic device, which reduces the internal loss of the LED device and improves the light extraction efficiency. The device of the present invention integrates the light source and the optical waveguide on the same wafer, which solves the problem of monolithic integration of planar photons, and at the same time enables the light emitted by the LED to be transmitted along the optical waveguide, solving the problem of light transmission in the optical waveguide, and realizing optical Functions transmitted in the plane.

Description

technical field [0001] The invention belongs to the field of information materials and devices, and relates to a silicon substrate suspended LED optical waveguide integrated photon device and its preparation technology. Background technique [0002] From a material point of view, nitride materials, especially GaN materials, have a high refractive index (~2.5), are transparent in visible light and near-infrared bands, and are excellent optical materials. However, SiC and sapphire substrates are not easy to process, and the processing technology of nitrides, especially GaN, is not mature, which limits the development of nitride photonics and optical micro-electromechanical devices. In recent years, by introducing AlN / AlGaN or other unique buffer layers to compensate for the residual stress caused by lattice mismatch and inconsistent thermal expansion, high-quality nitride materials based on silicon substrates have become increasingly mature and have gradually entered the marke...

AI Technical Summary

Problems solved by technology

However, SiC and sapphire substrates are not easy to process, and the processing technology of nitrides, especially GaN, is not mature, which limits the development of nitride photonics and optical micro-electromechanical devices.

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