Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ferroelectric-semiconductor pn junction type novel laminated solar cell

A stacked sun and pn junction technology, applied in the field of solar energy and solar cells, can solve the problem of small short-circuit current

Active Publication Date: 2016-03-09
MIANYANG TEACHERS COLLEGE
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] The purpose of the present invention is to provide a solution to the problem that the open-circuit voltage of a traditional (pn) junction solar cell is limited by the band gap of the material and will reach the limit, while the short-circuit current (photovoltaic current) of a ferroelectric photovoltaic cell is relatively small. Ferroelectric-semiconductor pn junction type new tandem solar cell

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ferroelectric-semiconductor pn junction type novel laminated solar cell
  • Ferroelectric-semiconductor pn junction type novel laminated solar cell
  • Ferroelectric-semiconductor pn junction type novel laminated solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0062] The stacked solar cell in the embodiment of the present invention includes a metal electrode, a substrate pn junction, an inorganic ferroelectric material layer, and a transparent oxide electrode, and the metal electrode, the substrate pn junction, the inorganic ferroelectric material layer, and the transparent oxide electrode are connected in sequence , the substrate pn junction is located between the metal electrode and the inorganic ferroelectric material layer, and the inorganic ferroelectric material layer is located between the substrate pn junction and the transparent oxide electrode. Wherein, the substrate pn junction is located above the metal electrode, the inorganic ferroelectric material layer is located above the substrate pn junction, and the transparent oxide electrode is located above the inorganic ferroelectric material layer. Meanwhile, in some embodiments of the present invention, a transition layer is also provided between the substrate pn junction an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a ferroelectric-semiconductor pn junction type novel laminated solar cell. The purpose of the invention is to solve the problem that the open-circuit voltage of the traditional (pn) junction type solar cell is limited by the band gap of the material and reaches the limit, while the short-circuit current (photovoltaic current) of the ferroelectric photovoltaic cell is small. The laminated solar cell comprises a metal electrode, a substrate pn junction, an inorganic ferroelectric material layer, and a second electrode. The novel laminated solar cell of the invention can overcome the defects of the existing traditional (pn) junction type solar cell and the ferroelectric photovoltaic cell. By adopting the strong points while overcoming the weak points of the traditional (pn) junction type solar cell and the ferroelectric photovoltaic cell and organically combining the two cells, a ferroelectric-semiconductor pn junction novel laminated solar cell is provided. The photovoltaic voltage (open-circuit voltage) of the solar cell is improved, and the photovoltaic current (short-circuit current) of the solar cell is improved. The efficiency of the solar cell is improved greatly. The solar cell is of great progressive significance.

Description

technical field [0001] The invention relates to the field of solar energy, in particular to the field of solar cells, in particular to a novel ferroelectric-semiconductor pn junction type laminated solar cell. The invention can effectively improve the photovoltaic voltage and photovoltaic current of the solar cell, effectively improve the photoelectric conversion efficiency of the solar cell, and has good application prospects. Background technique [0002] Since the 20th century, industrial development and excessive exploitation of energy have triggered a global energy crisis. According to the "BP World Energy Statistical Yearbook" statistics (June 2011), according to the current human energy exploitation speed and proven reserves, global oil can only be exploited by human beings for 46.2 years, natural gas can be exploited for 58.6 years, and coal can only be exploited by human beings. It has been mined for 118 years. In other words, decades later, mankind will face a hu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0687H01L31/032
CPCH01L31/032H01L31/0687Y02E10/544
Inventor 李雪冬王雪敏彭丽萍熊政伟吴卫东唐永建
Owner MIANYANG TEACHERS COLLEGE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com