Method and system for suppressing light-induced attenuation of photovoltaic elements

A photovoltaic element and light-induced attenuation technology, which is applied in photovoltaic modules, photovoltaic power generation, electrical components, etc., can solve problems such as disappearance and decrease in photoelectric conversion efficiency of photovoltaic elements, and achieve the effect of suppressing light-induced attenuation

Inactive Publication Date: 2017-05-24
SINO AMERICAN SILICON PROD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if the photovoltaic element that has been annealed at low temperature encounters an ambient temperature higher than the initial annealing temperature during operation, the effect of suppressing light-induced attenuation will disappear, and the photoelectric conversion efficiency of the photovoltaic element will still decrease

Method used

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  • Method and system for suppressing light-induced attenuation of photovoltaic elements
  • Method and system for suppressing light-induced attenuation of photovoltaic elements
  • Method and system for suppressing light-induced attenuation of photovoltaic elements

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Embodiment Construction

[0049] The present invention will be described in detail below in conjunction with the drawings and embodiments.

[0050] See image 3 An embodiment of the method for inhibiting (Inhibiting) the light-induced degradation (LID) of a photovoltaic element of the present invention includes the following steps:

[0051] (A) Lighting treatment:

[0052] Without the interference of ambient light (Ambient Light), a light emitted from a luminous source 12 is used to perform a light treatment on a photovoltaic element 2 to heat the photovoltaic element 2. The light has a wavelength not less than 300 nanometers.

[0053] The light-emitting source 12 used for the illumination treatment is an infrared lamp, a halogen lamp, a semiconductor light-emitting element, an organic light-emitting element, or a combination of at least one of the foregoing.

[0054] For example, the photovoltaic element 2 includes a silicon substrate doped with boron or oxygen, or a silicon substrate doped with boron and gall...

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Abstract

A method of suppressing light-induced attenuation of a photovoltaic element comprising step (a) subjecting the photovoltaic element to a light treatment with a light having a wavelength of not less than 300 nanometers without the interference of ambient light, so as to heat the photovoltaic element; and (b) keeping the temperature of the photovoltaic element higher than an annealing temperature of the photovoltaic element for at least 0.5 minutes, thereby achieving the effect of effectively suppressing light-induced attenuation. A system for suppressing light-induced degradation of photovoltaic elements is also disclosed.

Description

Technical field [0001] The present invention relates to a method and system for photovoltaic elements, in particular to a method and system for inhibiting the light-induced attenuation of photovoltaic elements. Background technique [0002] Most photovoltaic elements have light-induced attenuation effects. Take the silicon-based solar cell with crystalline silicon as the substrate as an example. Because the crystalline silicon is doped with impurities during the growth process, the initial light on the silicon-based solar cell will cause the dopants (such as boron), oxygen, Impurities such as iron form a recombination center, thereby reducing the minority carrier life cycle of silicon wafers, causing the photoelectric conversion efficiency of silicon-based solar cells to decrease, and a relatively large amount of light-induced attenuation occurs. [0003] The prior art for reducing the photo-attenuation effect of photovoltaic elements is as follows. [0004] There is a magnetic Czo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804H01L31/186H01L21/67115H01L21/67109Y02E10/547H01L31/1864Y02P70/50H02S99/00H05B3/0047
Inventor 贾约诺·布迪杨明瑞刘建弘沈国伟丁传文吴文生
Owner SINO AMERICAN SILICON PROD
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