Amorphous silicon germanium thin-film solar cell having double-layer interface band gap buffer layer

A solar cell, amorphous silicon thin film technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as serious interface recombination, and achieve the effects of enhancing absorption, reducing recombination, and facilitating transmission

Active Publication Date: 2016-01-27
GRIMAT ENG INST CO LTD
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the problem still exists is that the single-layer material cannot buffer the poor interfacial band gap well, and the interfacial recombination is still extremely serious.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Amorphous silicon germanium thin-film solar cell having double-layer interface band gap buffer layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] In this embodiment, an amorphous silicon germanium thin-film solar cell with a flexible substrate having a continuously changing bandgap absorbing layer and a double-layer interfacial bandgap buffer layer is prepared according to the following steps:

[0037] (1) Select a mirror-finished stainless steel strip with a thickness of 100 μm and a surface roughness of 3 nm as the substrate, and clean it. The cleaning process is: ultrasonic cleaning with deionized water, acetone, and ethanol for 20 minutes in sequence.

[0038] (2) The bottom electrode of the battery was prepared by magnetron sputtering: a 300nm thick Ag layer and a 200nm thick AZO layer were sequentially prepared on the substrate, and the radio frequency power was 100w and 200w respectively. The transmittance of AZO in the visible light range is 60% to 80%, and the resistivity of AZO is 8.5×10 -3 Ω·cm.

[0039] (3) Chemically treat the Ag / AZO to form a micro-nano structure on the base surface. The method i...

Embodiment 2

[0048] In this embodiment, an amorphous silicon germanium thin-film solar cell with a flexible substrate having a continuously changing bandgap absorbing layer and a double-layer interface bandgap buffer layer is prepared according to the following steps:

[0049] (1) Float glass with a thickness of 100 μm and a surface roughness of 2 nm is selected as a substrate and cleaned. The cleaning process is: ultrasonic cleaning with deionized water, acetone, and ethanol for 20 minutes in sequence.

[0050] (2) Prepare the bottom electrode of the battery by magnetron sputtering method: prepare a 400nm thick AZO layer on the substrate, the purpose is to transmit light from the front and back directions, and the radio frequency power is 200w respectively. The transmittance of AZO in the visible light range is 60% to 80%, and the resistivity of AZO is 8.5×10 -3 Ω·cm.

[0051] (3) AZO is chemically treated to form a micro-nano structure on the base surface. The method is to wash with h...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an amorphous silicon germanium thin-film solar cell having a double-layer interface band gap buffer layer. The amorphous silicon germanium thin-film solar cell comprises an electrode I, an n-type doped amorphous silicon thin film, an n-i buffer layer, a continuously variable band gap intrinsic (i type) amorphous silicon germanium thin film, an i-p double-layer band gap buffer layer, a p-type doped amorphous silicon thin film and an electrode II which are successively prepared on a substrate; and the electrode I and the electrode II are respectively a bottom electrode and a top electrode of the cell. A digital flowmeter is controlled through a computer, the continuously variable band gap amorphous silicon germanium thin film is prepared, and hole transmission is effectively increased; and, through adoption of the double-layer band gap buffer layer structure, energy band mismatching of a p-type window layer and the amorphous silicon germanium thin film is reduced, and then recombination of carriers at an interface defect state is reduced. Furthermore, the invention provides a method for preparing a micro-nano structure on a back reflection electrode, the optical paths of light rays in the cell can be increased, and then light absorption is increased.

Description

technical field [0001] The invention relates to an amorphous silicon germanium thin-film solar cell structure with a double-layer interface band gap buffer layer, belonging to the technical field of semiconductor manufacturing. Background technique [0002] In recent years, as one of the future new energy utilization methods, photovoltaic cells have been widely used in daily production and life. Crystalline silicon solar cells have high efficiency and stability, so crystalline silicon cells occupy a large market share. However, high-quality silicon wafers are expensive to prepare, and their high quality and fragility increase their transportation costs and installation difficulties. Amorphous silicon thin-film batteries use less materials and lower cost, but the efficiency is still not high, and at the same time, there is a phenomenon of efficiency decay. Therefore, preparing batteries with higher initial efficiency has become a common goal pursued by the field of silicon th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0445H01L31/0352
CPCY02E10/50
Inventor 王飞王吉宁苑慧萍刘晓鹏蒋利军王树茂
Owner GRIMAT ENG INST CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap