Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for measuring thin layer material square resistance and connection point contact resistance

一种薄层材料、方块电阻的技术,应用在测量电阻/电抗/阻抗、很高的电阻测量、测量装置等方向,能够解决尚无测量薄层材料连接点接触电阻等问题

Active Publication Date: 2015-12-30
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is currently no standard method for measuring the contact resistance of junctions in thin-layer materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for measuring thin layer material square resistance and connection point contact resistance
  • Method for measuring thin layer material square resistance and connection point contact resistance
  • Method for measuring thin layer material square resistance and connection point contact resistance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The present invention will be further described below in conjunction with the drawings and the following embodiments. It should be understood that the drawings and the following embodiments are only used to illustrate the present invention rather than limit the present invention.

[0027] figure 1 Schematic diagram of the method for measuring sheet resistance of thin-layer materials for two circular electrodes, wherein, electrode A (i.e. figure 1 The left electrode 2) and electrode B (ie figure 1 The radii of the right electrodes 3) are r A and r B , the distance between the centers of the two electrodes is L. figure 2 Schematic diagram of the method for measuring sheet resistance of thin-layer materials and electrode contact resistance for four small electrodes.

[0028] Aiming at the problems in the prior art, the present invention provides a method for testing sheet resistance of thin-layer materials and contact resistance of connection points: installing at lea...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
evennessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for measuring thin layer material square resistance and connection point contact resistance. The method comprises the steps of installing four or more electrodes on the surface of a thin layer material; measuring resistance among the electrodes; according to a theoretical model, calculating the square resistance and the electrode contact resistance of the thin layer material through the measured resistance among the electrodes and the distance among the electrodes. The method has the main advantages of being simple and convenient and is a nondestructive method for measuring the square resistance and the electrode contact resistance of the thin layer material, and no strict requirement for electrode distribution exists.

Description

technical field [0001] The invention relates to a method for testing the square resistance and connection point contact resistance of conductive thin-layer materials. The thin-layer materials include single-layer or multi-layer coatings and thin-film materials. These thin-layer materials may be independent or supported by non-conductive substrates. Background technique [0002] Sheet resistance is one of the important electrical properties of thin-layer materials, and its accurate measurement is an important means to evaluate and monitor semiconductor materials. At the same time, thin-layer materials are widely used in the manufacture of electronic devices, and their sheet resistance directly affects the quality of devices. Thin-layer metals, alloys, semiconductor materials and conductive coating materials on substrates are used in the manufacture of semiconductor devices and electronic circuit connections, as well as surface modification and protection of objects. [0003]...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R27/02
CPCG01R27/02G01R27/205G01R27/025
Inventor 张步法
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products