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Method for preparing photoelectrode of alpha-iron oxide film by single-source precursor

A technology of iron oxide and photoelectrode, which is applied in the direction of electrodes, electrolysis process, electrolysis components, etc., can solve the problems of precursor regulation and control, achieve the effects of controllable thickness, simplify the preparation process, and reduce costs

Inactive Publication Date: 2015-11-11
XUCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a method for preparing the photoelectric properties of activated thin films, and solve the problem of precursor regulation in the prior art

Method used

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  • Method for preparing photoelectrode of alpha-iron oxide film by single-source precursor
  • Method for preparing photoelectrode of alpha-iron oxide film by single-source precursor
  • Method for preparing photoelectrode of alpha-iron oxide film by single-source precursor

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0047] Example 1: Ferric ammonium citrate prepares undoped ferric oxide

[0048] The FTO conductive substrate is ultrasonically washed with ethanol, distilled water, hydrogen peroxide-ammonia-water, and distilled water for 5-10 minutes respectively, and then dried naturally in the air for later use; ferric ammonium citrate (NH4) 3FeC12H10O14 salt is dissolved in distilled water to prepare The aqueous solution with a concentration of 0.0025mol / L is then poured into the lining of the reactor with a filling degree of 10-70%; put the cleaned substrate into the lining vertically or horizontally with the conductive side facing up, and seal the autoclave; React in an oven at 180°C for 16 hours; take out the substrate on which the film is deposited, wash it with distilled water, and dry it naturally to obtain an α-Fe2O3 film; repeat this step to obtain an α-Fe2O3 film with adjustable thickness.

example 2

[0049] Example 2: Ferric ammonium citrate prepares Sn-doped ferric oxide

[0050] The conductive substrate is treated as in Example 1; dissolving ferric ammonium citrate in distilled water to form an aqueous solution with a concentration of 0.0025mol / L, adding 1mol / L HCl to adjust the pH=1~3, and then adding SnCl2 2H2O solution (keep [ Sn] / [Fe]=3-5%), transfer to the lining of the reaction kettle, the filling degree is 10-70%; put the cleaned substrate into the lining vertically or horizontally with the conductive side up, and seal it Autoclave; react in an oven at 180°C for 16 hours; take out the substrate on which the film is deposited, wash with distilled water, and dry naturally to obtain a Sn-doped α-Fe2O3 film; repeat this step to obtain a doped α-Fe2O3 film with adjustable thickness -Fe2O3 film.

example 3

[0051] Example 3: Ferric ammonium oxalate prepares undoped ferric oxide

[0052] The conductive substrate is treated as example 1; high ammonium oxalate (NH ) 3 Fe (C ) 4) 3 salt is dissolved in distilled water and is made into the aqueous solution that concentration is 0.0005mol / L, then pours in the reactor liner, filling degree is 10 -70%; put the cleaned substrate into the liner vertically or horizontally with the conductive side up, and seal the autoclave; react in an oven at 100°C for 12 hours; take out the substrate with the film deposited, wash it with distilled water, Dry naturally to obtain α-Fe2O3 film.

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Abstract

The invention provides a method for hydrothermal deposition of an iron oxide film through a one-step method by using single-source soluble complex iron salt as a precursor. The firm and compact iron oxide film is obtained through performing hydrothermal deposition onammonium ferric citrate or ammonium ferric oxalate serving as a raw material at a temperature of 90-200 DEG C. The iron oxide film, prepared by adopting the method, can be directly deposited on F-doped tin dioxide electric conducting glass, a surface-treated stainless steel substrate or common glass. The film obtained by being activated in the process that the iron oxide is reduced by ethanol and reoxidized has excellent photoelectric property. The method has the advantages that the concentration of other additives in solution does not need to be adjusted due to the fact that not many reaction precursors are used; the iron oxide film is directly obtained without adopting the process of annealing FeOOH and converting the annealed FeOOH into iron oxide, so that the manufacturing cost is reduced.

Description

technical field [0001] The invention relates to a method for preparing and activating an iron oxide film photoelectrode. Background technique [0002] Modern society is heavily dependent on the large-scale consumption of fossil energy, and countries are under pressure to limit carbon dioxide emissions, which has aroused people's attention to the rich resource of solar energy: for example, photovoltaic power generation, photovoltaic hydrogen production and other applications. Since the mature hydrogen fuel cell technology can convert hydrogen into electricity, it has become one of the important ways to replace fossil energy. Therefore, various technologies for preparing hydrogen have become an urgent development direction. Based on the characteristics of semiconductor photoelectric separation of charges, the technology of using solar energy to split water to produce hydrogen to obtain clean energy can improve various environmental crises caused by current carbon fuels and re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/12C25B11/04
Inventor 杨晓刚张艳鸽李梦祥王小超赵元昊王珂吴其华葛德培
Owner XUCHANG UNIV
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