Preparation method of metal tungsten thin film

A metal tungsten and thin film technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the micro-deformation of the whole wafer, affect the transmission of visible light or isolate the quantity and quality, and affect the imaging quality of CIS products and other problems to achieve the effect of stress reduction

Inactive Publication Date: 2015-10-14
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology

The formation of this high tensile stress can easily cause micro-deformation of the entire wafer, which will seriously affect the q...

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  • Preparation method of metal tungsten thin film

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Embodiment Construction

[0021] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0022] see figure 1 As shown in the structure, this embodiment provides a method for preparing an ultra-low stress metal tungsten film. The stress of the metal tungsten film is lower than that of a conventional metal tungsten film, forming an ultra-low stress metal tungsten film. Increase the reaction temperature in the reaction chamber and reduce the amount of reaction gas at the same time, thereby increasing tungsten hexafluoride (WF6) and hydrogen (H2) to generate metal tungsten atoms in the reaction chamber. The method specifically includes the following steps:

[0023] Firstly, a semiconductor substrate is provided, preferably, the material of the semiconductor substrate is titanium nitride. Continue to prepare a nucleation layer on the surface of the semiconductor substrate.

[0024] As ...

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Abstract

The invention relates to the technical field of manufacturing of semiconductors, in particular to a preparation method of a metal tungsten thin film. The reaction temperature of gas in a reaction cavity is changed, and the amount of reaction gas is reduced, so that metal tungsten atoms are formed on the reaction cavity as many as possible; and then, the atoms fall on the surface of a nucleating layer and grow in order, and the metal tungsten thin film is formed. According to the technical scheme, stress of the metal tungsten thin film is effectively reduced, and compared with a traditional method, the method reduces the stress by 73%.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a metal tungsten thin film. Background technique [0002] With the development of semiconductor technology, metal oxide semiconductor technology to manufacture image sensor technology (CIS: CMOS image sensor) has become a mainstream process in the emerging imaging field. Among them, the metal thin film is widely used in the industry as a reflection or isolation layer of incident light because of its good performance of visible light reflection and transmission. Metal tungsten thin film is adopted by most mainstream CIS manufacturers because of its excellent visible light reflection performance, good high temperature stability, and simple manufacturing process. [0003] However, the metal tungsten film is easy to form high tensile stress (tensile, 1000-3000 Angstrom tungsten film has a tensile stress of about 1759 MPa) due to its high te...

Claims

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Application Information

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IPC IPC(8): C23C16/14
Inventor 封铁柱
Owner WUHAN XINXIN SEMICON MFG CO LTD
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