Preparation method of metal tungsten thin film
A metal tungsten and thin film technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the micro-deformation of the whole wafer, affect the transmission of visible light or isolate the quantity and quality, and affect the imaging quality of CIS products and other problems to achieve the effect of stress reduction
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[0021] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
[0022] see figure 1 As shown in the structure, this embodiment provides a method for preparing an ultra-low stress metal tungsten film. The stress of the metal tungsten film is lower than that of a conventional metal tungsten film, forming an ultra-low stress metal tungsten film. Increase the reaction temperature in the reaction chamber and reduce the amount of reaction gas at the same time, thereby increasing tungsten hexafluoride (WF6) and hydrogen (H2) to generate metal tungsten atoms in the reaction chamber. The method specifically includes the following steps:
[0023] Firstly, a semiconductor substrate is provided, preferably, the material of the semiconductor substrate is titanium nitride. Continue to prepare a nucleation layer on the surface of the semiconductor substrate.
[0024] As ...
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