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Semiconductor device, method of manufacturing same, and method of controlling semiconductor device

A semiconductor and device technology, which is used in the field of controlling semiconductor devices to achieve the effect of improving image quality

Inactive Publication Date: 2015-09-02
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Image sensors using color filters are therefore not suitable for e.g. automotive digital cameras

Method used

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  • Semiconductor device, method of manufacturing same, and method of controlling semiconductor device
  • Semiconductor device, method of manufacturing same, and method of controlling semiconductor device
  • Semiconductor device, method of manufacturing same, and method of controlling semiconductor device

Examples

Experimental program
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Effect test

no. 1 example

[0062] First, refer to figure 1 and figure 2 A semiconductor device in the form of a wafer of the present embodiment is described.

[0063] like figure 1 As shown, the semiconductor wafer SCW has a plurality of chip regions IMC for image sensors. The chip regions IMC each have a rectangular planar shape, and they are placed in a matrix.

[0064] like figure 2 As shown, the chip area IMC has, as a photoelectric conversion element, for example, a pixel portion PDR and a peripheral circuit portion PCR, wherein the pixel portion PDR is a formation area of ​​a photodiode, and the peripheral circuit portion PCR is a formation area of ​​a peripheral circuit for controlling the photodiode. . The peripheral circuit portion PCR is located, for example, on both sides of the pixel portion PDR. The chip area IMC has a scribe line area DLR therebetween. The scribe line region DLR has alignment marks therein. By dicing along this scribe line region DLR, the semiconductor wafer SC...

no. 2 example

[0162] like Figure 28 As shown, the present embodiment uses the element isolation insulating film SI made of, for example, a silicon oxide film and formed of LOCOS (Local Oxidation of Silicon), instead of the element isolation insulating film SI of the first embodiment formed of STI.

[0163] The second embodiment differs from the first embodiment in the above-mentioned points, but the configuration of this embodiment is almost similar to that of the first embodiment other than that. exist Figure 28 In , similar elements are identified by similar reference numerals and overlapping descriptions are omitted. Also in this embodiment, substantially similar advantageous effects as those of the first embodiment can be obtained.

[0164] like Figure 29 As shown, in the manufacturing method of this embodiment, for example, the silicon nitride oxide film NOF is formed by CVD or the like instead of Figure 5 The silicon oxide film OX is formed on substantially the entire main sur...

no. 3 example

[0169] like Figure 32 As shown, the present embodiment has an element isolation insulating film DI called a DTI (Deep Trench Isolation) film instead of the element isolation insulating film SI formed by STI in the first embodiment, and the element isolation insulating film DI is formed on the main surface S2 The side extends deeper than the element isolation insulating film SI, and is made of, for example, a silicon oxide film.

[0170] Similar to the element isolation insulating film SI, the element isolation insulating film DI is preferably formed at a boundary portion between one pixel region and another pixel region adjacent thereto. For example, it may be formed in main surface S1 in at least part of a region overlapping with p-type well region DPW3 ​​located in the pixel boundary region in plan view. The element isolation insulating film DI preferably extends to the main surface S2 side deeper than the lowermost part of the p-type well region DPW1 of the pixel region (...

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Abstract

Provided are a semiconductor device capable of detecting a light of each color with high accuracy without using a color filter, particularly enhancing detection accuracy of charges obtained by photoelectric conversion of a long-wavelength light, and manufacturing and control methods thereof. The semiconductor device has a p type semiconductor substrate, and first, second and third pixel regions. These regions each include a p type well region in the p type semiconductor substrate and an n type region configuring a pn junction therewith. The p type well region of the first pixel region is thinner, from the main surface to the lowermost portion, than that of the second and third pixel regions. On the side opposite to the main surface of the p type well region of the first and second pixel regions, a buried p type well region contiguous to the p type well region is further placed.

Description

[0001] Cross References to Related Applications [0002] Japanese Patent Application No. 2014-036886 filed on February 27, 2014 including specification, drawings and abstract is incorporated herein by reference in its entirety. technical field [0003] The present invention relates to a semiconductor device, a method of manufacturing the semiconductor device, and a method of controlling the semiconductor device, and more particularly, to a semiconductor device including a photoelectric conversion element such as a photodiode, a method of manufacturing the semiconductor device, and a method of controlling the semiconductor device. Background technique [0004] Image sensors for automotive digital cameras, particularly digital single-lens reflex cameras, are typically fabricated by forming wiring, applying a glass coating to the wiring, and then forming dichroic color filters and light-collecting on-chip lenses on the glass coating. The reflected light from the subject passes...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L21/66
CPCH04N9/045H01L27/14609H01L27/14647H01L27/14683H04N5/341H01L27/14607H01L27/1461H01L27/14612H01L27/1462H01L27/14627H01L27/1463H01L27/14645H01L27/14689H04N25/40
Inventor 板垣圭一国清辰也
Owner RENESAS ELECTRONICS CORP
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