Gate commutated thyristor chip applied to hybrid direct-current circuit breakers
A DC circuit breaker and gate commutation technology, applied in thyristors, circuits, semiconductor devices, etc., can solve problems such as unbalanced commutation time, and achieve the effect of improving current shut-off capability and easy adjustment
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[0061] This embodiment is a classic 4-inch, 4kV / 5kA GCT chip, and the specific implementation is described as follows:
[0062] The basic mechanism of the chip in this embodiment is the same as that of the existing GCT chip, that is, each cell includes from the cathode to the anode: n+ emitter, p base, n base, n+ buffer layer, p+ emitter, such as Figure 8 shown. The cathode, gate and anode are all connected to an external drive circuit through metal electrodes. The cathode metal electrode 44 is arranged on the outer surface of the n+ emitter region, and the gate metal electrode 45 is arranged on the surface of the p base region outside the n+ emitter region. During normal conduction, current flows from the anode to the cathode.
[0063] Such as Figure 8 As shown, the 5th and 6th rings on the cathode surface of this embodiment are the closest to the gate contact ring, so the p-base regions of the 5th and 6th rings have the widest depth, as the number of rings within the 5t...
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