Amorphous zinc oxide-based thin film transistor and preparation method thereof
A thin-film transistor, zinc oxide-based technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of high manufacturing cost, scarce content, and non-environmental protection, achieve uniform distribution, simple steps, and reduce industrial manufacturing cost effect
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[0032] The present invention will be further described through the embodiments below in conjunction with the accompanying drawings.
[0033] Such as figure 1 and figure 2 As shown, the amorphous zinc oxide-based thin film transistor of the present invention includes: a substrate 1, a gate electrode 2, a gate dielectric layer 3, a channel layer 4, a source electrode and a drain electrode 5, wherein the gate electrode is formed on the substrate 1 2. Form a gate dielectric layer 3 on the gate electrode 2 , form a channel layer 4 on the gate dielectric layer 3 , and form a source electrode and a drain electrode 5 at both ends of the channel layer 4 .
[0034] An embodiment of the preparation method of the thin film transistor of the present invention is shown in Figure 3 (a) to (e), including the following steps:
[0035] 1) Use transparent glass or plastic as the substrate 1, as shown in Figure 3(a), grow a conductive film of ITO with a thickness of 50 to 150 nanometers on the...
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