Nano counter electrode and preparation method thereof

Abstract

The invention discloses a nanometer counter electrode and a manufacturing method of the nanometer counter electrode. The manufacturing method includes the steps of arranging a substrate, and arranging a resist on the substrate; determining an exposure layout, wherein the exposure layout is provided with a nanometer counter electrode pattern used for forming the nanometer counter electrode, the nanometer counter electrode pattern is formed by two long-strip-shaped parts extending in the same straight line, the long-strip-shaped parts are arranged in an axial symmetry mode, each long-strip-shaped part comprises a rectangle and a triangle, one short edge of each rectangle is coincident with one edge of the corresponding triangle; the triangle of one long-strip-shaped part faces the triangle of the other long-strip-shaped part; conducting electron beam lithography, developing and photographic fixing on the resist according to the exposure layout to form an etching groove; depositing metal on the substrate with the etching groove, dissolving the residual resist, and obtaining the nanometer counter electrode. The nanometer counter electrode is of a point contact structure, the performance is more stable and reliable, the contact area and the radiation are smaller, the neighbor effect is weakened, the microcell exposure dose is better regulated and controlled, the exposure resolution ratio is improved, and the nanometer counter electrode with space ranging from 3 nm to 10 nm is obtained.

Description

technical field [0001] The invention relates to the technical fields of micro-nano device processing and quantum information, in particular to a nano-counter electrode and a preparation method thereof. Background technique [0002] Electrons have particle and wave properties at the same time. The De Broglie wavelength of free electrons in materials is on the order of nanometers. When the size of the element reaches the order of electron wavelength, there will be obvious quantum effects. For example, in semiconductor integrated circuits, when the circuit size is close to the wavelength of electrons, electrons will overflow the device through the tunnel effect, making the device unable to work normally. Also in nanoscale components, the electron transfer process will interfere like light waves, not only has very little energy dissipation, but also can store and transfer electronic phase information, making it an ideal information processing component. Therefore, nanoelectroni...

AI Technical Summary

Problems solved by technology

However, the existence of the neighbor effect makes the actual width of the exposed pattern after the final development larger than the width of the original layout design, which reduces the precision of layout production and makes the production process more complicated.

[0007] At present, positive electronic resists are used to prepare metal nano-electrodes. Due to the existence of the neighbor effect, the distance between the prepared metal nano-counter electrodes reaches 30-100 nanometers.

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