Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Partitioned silicon photomultiplier with delay equalization

A silicon photomultiplier and photon detection technology, which is applied in the direction of electric solid-state devices, radiation control devices, instruments, etc., can solve the problems affecting the timing resolution of SiPM and the degradation of timing resolution.

Active Publication Date: 2015-02-25
OMNIVISION TECH INC
View PDF9 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] There are many factors that can affect the timing resolution of a SiPM
As the physical size of the photosensitive devices in the array of photon-detecting cells in the SiPM increases, different signal propagation delays caused by different distances between the photon-detecting cells in the SiPM and the readout circuitry cause undesired skew, which makes timing Resolution Downgrade

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Partitioned silicon photomultiplier with delay equalization
  • Partitioned silicon photomultiplier with delay equalization
  • Partitioned silicon photomultiplier with delay equalization

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be understood, however, by one skilled in the art that these specific details need not be employed to practice the invention. In other instances, well-known materials or methods have not been described in detail in order not to obscure the present invention.

[0013] Reference throughout this specification to "one embodiment," "an embodiment," "an example," or "an example" means that a particular feature, structure, or characteristic described in connection with the embodiment or example is included in at least one aspect of the invention. In one embodiment. Thus, appearances of the phrases "in one embodiment," "in an embodiment," "an example," or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structure...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A photon detection device includes a first wafer having an array of photon detection cells partitioned into a plurality of photon detection blocks arranged in the first wafer. A second wafer having a plurality of block readout circuits arranged thereon is also included. An interconnect wafer is disposed between the first wafer and the second wafer. The interconnect wafer includes a plurality of conductors having substantially equal lengths. Each one of the plurality of conductors is coupled between a corresponding one of the plurality of photon detection blocks in the first wafer and a corresponding one of the plurality of block readout circuits such that signal propagation delays between each one of the plurality of photon detection blocks and each one of the plurality of block readout circuits are substantially equal.

Description

technical field [0001] The present invention relates generally to photodetectors, and more specifically, the present invention is directed to silicon photomultipliers. Background technique [0002] A silicon photomultiplier (SiPM) is a type of photodetector capable of detecting low intensity signals down to a single photon. SiPM devices can be used in a variety of applications including, for example, detection of ionizing radiation or silicidation. SiPMs are semiconductor photosensitive devices that consist of an array of Geiger-mode photon detection cells, such as avalanche photodiodes (APDs), fabricated on a silicon substrate. Geiger-mode APDs generate pulses with the same amplitude when struck by photons. They have p-n junctions that are biased above the breakdown voltage so that each electron-hole pair can trigger an avalanche multiplication process that causes the current at the output of the photon detection cell to quickly reach its final value . This avalanche cu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02G01J11/00
CPCH01L27/144H01L27/14634
Inventor 艾瑞克·A·G·韦伯斯特
Owner OMNIVISION TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com