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Excimer laser annealing device and using method thereof

A technology of excimer laser and excimer laser, which is applied in laser welding equipment, electrical components, circuits, etc., can solve the problems of small polysilicon grains, affecting the electron mobility of polysilicon, and affecting the display effect of the display, so as to achieve the effect of improving the effect

Active Publication Date: 2015-02-18
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

Since the current excimer laser beam is evenly irradiated on the amorphous silicon thin film layer, the temperature of each part of the amorphous silicon thin film layer is roughly equal, so the starting point and direction of recrystallization cannot be controlled, resulting in smaller grains of polycrystalline silicon after crystallization. There are too many grain boundaries between grains, which seriously affects the electron mobility of polysilicon, thus affecting the display effect of the display

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  • Excimer laser annealing device and using method thereof
  • Excimer laser annealing device and using method thereof
  • Excimer laser annealing device and using method thereof

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Embodiment Construction

[0031] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced. The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar units are denoted by the same reference numerals.

[0032] Please refer to figure 1 , figure 1 It is a schematic structural diagram of an excimer laser annealing device according to the first embodiment of the present invention.

[0033] Excimer laser annealing device of the present invention, as figure 1 As shown, it includes a substrate carrier 10 and an excimer laser 20. The substrate carrier 10 includes a beari...

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Abstract

The invention provides an excimer laser annealing device and a using method thereof. The device comprises a substrate loading table and an excimer laser device used for emitting excimer laser beams to a substrate. The substrate loading table comprises a loading surface used for loading the substrate with an amorphous silicon film, and a temperature adjusting module; the temperature adjusting module is used for adjusting the temperature of the loading surface and controlling the crystallization direction of amorphous silicon of the amorphous silicon film. According to the excimer laser annealing device and the using method thereof, the temperature adjusting module is arranged on the substrate table, a region with temperature gradients is formed, the amorphous silicon is recrystallized in the temperature adjusting direction, polysilicon with larger grain sizes is obtained, and the effect of a liquid crystal display is improved.

Description

【Technical field】 [0001] The invention relates to the technical field of liquid crystal displays, in particular to an excimer laser annealing device and a method for using the device. 【Background technique】 [0002] With the wide application of polysilicon components, the formation method of polysilicon has also become the main research direction. Among them, the excimer laser annealing process is an important step in the formation of polysilicon. In the traditional excimer laser annealing process, amorphous silicon becomes completely molten after being subjected to high temperature, and then recrystallized to form polysilicon. During recrystallization, it will crystallize in the direction of low energy to high energy, that is, crystallize from low temperature to high temperature. Since the current excimer laser beam is uniformly irradiated on the amorphous silicon thin film layer, the temperature of each part of the amorphous silicon thin film layer is roughly equal, so th...

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Application Information

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IPC IPC(8): H01L21/67H01L21/268B23K26/354
CPCB23K26/354H01L21/268H01L21/67H01L21/67011H01L2221/67
Inventor 姚江波
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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