Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device and method for protecting graphene film in etching and transfer

A graphene film and transfer device technology, which is applied in the manufacture of graphene, electrical components, semiconductors/solid devices, etc., can solve the problems of graphene sheet damage, graphene damage, and residual bubbles on the catalytic substrate, so as to achieve convenient transfer, The effect of avoiding damage

Active Publication Date: 2015-02-04
CHONGQING GRAPHENE TECH +1
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The area of ​​the graphene sheet used in the laboratory is generally 2cm×2cm, while the area of ​​the graphene film produced by industrial mass production is at least 25cm×25cm after slicing, so that the large-area graphene film is attached to the support layer on the surface Finally, if it is directly put into the etching solution for dissolution, bubbles are likely to remain between the etching liquid surface and the catalytic substrate, resulting in incomplete dissolution of the catalytic substrate.
Graphene with a support layer is very soft, especially after the catalytic substrate is dissolved, since the graphene layer is exposed, if there is no external protection, the support layer will sink to the bottom of the etching solution tank during the etching process. , causing the graphene to touch the bottom of the groove and be damaged
In addition, when the graphene sheet is transported, if the graphene sheet cannot be positioned well, it is easy to cause damage to the graphene sheet during transportation.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for protecting graphene film in etching and transfer
  • Device and method for protecting graphene film in etching and transfer
  • Device and method for protecting graphene film in etching and transfer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044]This embodiment includes a first clamp 1 and a second clamp 2, the first clamp 1 is a square frame structure composed of first clamp columns 6, and the second clamp 2 is composed of four second clamp columns 3 Square frame structure, the square size of the first clamp 1 is the same as the square size of the second clamp 2, and the first clamp 1 is arranged above the second clamp 2, the first clamp 1 and The second clamp 2 is connected by a movable buckle 4, and a clamp gap 5 is provided between the first clamp 1 and the second clamp 2, such as figure 1 shown. Such as image 3 , Figure 5 The first fixture 1 shown is a square frame structure with an open side on one side consisting of three first fixture columns 6, and the first fixture 1 is provided with a frame for identifying the first fixture 1 and sensing the first fixture 1. A first clamp sensing chip 7 for the position of the first clamp 1 , and a second clamp sensing chip 8 for identifying the second clamp 2 an...

Embodiment 2

[0053] This embodiment includes a first clamp 1 and a second clamp 2, the first clamp 1 is a square frame structure, the second clamp 2 is a square frame structure composed of four second clamp columns 3, the first The square size of the clamp 1 is the same as the square size of the second clamp 2, the first clamp 1 and the second clamp 2 are connected by a movable buckle 4, the first clamp 1 and the second clamp 2 between fixture gaps 5, such as figure 2 shown. Such as Figure 4 , Figure 5 As shown, the first clamp 1 is a square frame structure consisting of four first clamp columns 6 with the lower surface in the same plane, one of the four first clamp columns 6 forming the first clamp 1 The thickness of the first clamp column 6 is smaller than the other three first clamp columns 6, and the first clamp 1 is provided with a first device for identifying the first clamp 1 and sensing the position of the first clamp 1. Clamp sensing chip 7, the second clamp sensing chip 8 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of graphene manufacture, in particular to a device and a method for protecting a graphene film in etching and transfer. The device comprises a first fixture and a second fixture, the first fixture is of a square frame structure comprising first fixture columns, the second fixture is of a square frame structure comprising four second fixture columns, the square size of the first fixture is as same as that of the second fixture, the first fixture is arranged above the second fixture and connected with the second fixture through movable fasteners, and a fixture gap is reserved between the first fixture and the second fixture. The device and the method have the advantages that a graphene sheet is clamped before etching by the aid of a transfer device comprising the first fixture and the second fixture, the graphene sheet can be conveniently transferred and can also be protected in etching, and damage to the graphene film due to the fact that the graphene sheet touches the bottom of an etchant trough is avoided.

Description

technical field [0001] The invention relates to the technical field of graphene production, in particular to a device and method for protecting graphene film etching and transfer. Background technique [0002] Graphene is carbon atoms by sp 2 The monoatomic layer planar thin film composed of hybrid orbitals in hexagonal lattice, as a new type of semiconductor material, has the characteristics of high light transmittance and high conductivity. At present, the laboratory mainly uses the chemical vapor deposition (CVD) method to prepare graphene films on the catalytic substrate, and then spin-coats the organic support layer on the surface, and puts the graphene with the support layer into the etching solution. Due to the density of the organic support layer Small enough to allow the film to float on the liquid surface of the etching solution. After the catalytic substrate is etched, the remaining etching solution on the surface of the graphene with the support layer is cleaned...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/02H01L21/687
CPCC01B32/19H01L21/02H01L21/687
Inventor 钟达史浩飞崔华亭李占成谭其良
Owner CHONGQING GRAPHENE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com