Method for extracting device equivalent circuit model parameters and pad parasitic parameters extraction method

Abstract

The invention discloses a method for extracting parameters of an equivalent circuit model of a device, which mainly solves the problems of complicated extraction process and inaccurate extraction results in the prior art. The parasitic parameter extraction method is to divide the short-circuit pad equivalent circuit stripped of parasitic capacitance into independent networks for further analysis, and simultaneously extract parasitic resistance and parasitic inductance parameters. The invention also discloses a method for extracting parasitic parameters of pads, which uses the above-mentioned equivalent circuit parameter extraction method. The simulation results show that the results of the parasitic parameters extracted by the present invention are more consistent with the scattered parameters of the actual device test results, and the extracted parameters are more accurate and fast.

Description

technical field [0001] The invention relates to a device equivalent circuit model parameter extraction method and a de-embedded transistor device test pad parasitic parameter extraction method, belonging to the technical field of integrated circuits. Background technique [0002] Transistor models mainly include two types, physical models and equivalent circuit models. Among them, the equivalent circuit model is a general and effective model for simulating transistors. Establishing an accurate equivalent circuit model is the key to the success of circuit design. The core factor that reduces the cost of development and production. [0003] For the transistor device model, the calibration of test equipment, de-embedding of pad parasitics, the topology of the equivalent circuit and the extraction method of parameters will all affect the accuracy of the model (Erickson N, Shringarpure K, Fan J, et al. De-embedding Techniques for transmission lines: An exploration, review, and ...

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Problems solved by technology

However, there are certain defects in this method. Because the parasitic capacitance parameters are difficult to completely peel off, when the curve of the real part of the Z parameter and the frequency is drawn to extract the parasitic resistance parameter, the curve of the real part of the Z parameter and the resistance will appear to be dependent on frequency. At the same time, it will also affect the accuracy of extracting the imaginary part of the Z parameter (Gu D, Wallis T M, Blanchard P, et al. De-embedding parasitic elements of GaN nanowire metal semiconductorfield effect transistors by use of microwave measurements[J].Applied Physics Letters, 2011, 98(22): 223109. Reference 4)

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