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Gas reaction continuous cavity and gas reaction method

A gas reaction and reaction chamber technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve problems such as poor efficiency and time-consuming

Inactive Publication Date: 2014-12-24
生阳新材料科技(宁波)有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the above-mentioned process is quite time-consuming, and the steps of heating, reaction and cooling must be completed in the chamber in order before the same process can be repeated for another substrate, so its efficiency is not good and still needs to be improved

Method used

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  • Gas reaction continuous cavity and gas reaction method
  • Gas reaction continuous cavity and gas reaction method
  • Gas reaction continuous cavity and gas reaction method

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Embodiment Construction

[0013] Please see first figure 1 , the gas reaction continuous chamber 10 provided by the first preferred embodiment of the present invention comprises a conveying device 12, and a first isolating device 14, a preheating chamber 16, a second isolating device 18, a Reaction chamber 20, a third isolating device 22, a cooling chamber 24 and a fourth isolating device 26, and the conveying device 12 is located in the several chambers 16, 20, 24 and the several isolating devices 14, 18 , 22, 26.

[0014] The conveying device 12 has a front end 122 and a rear end 124, the conveying device 12 is used to set a reactant 28, and is mainly used to drive the reactant 28 to move toward the front end 122 and then pass through the plurality of chambers 16 , 20, 24; however, the delivery device 12 may also (but not limited to) have the function of driving the reactant 28 to move toward the rear end 122 .

[0015] In this embodiment, the conveying device 12 includes a plurality of cylinders 1...

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Abstract

The invention provides a gas reaction continuous cavity and a gas reaction method using the gas reaction continuous cavity. The gas reaction continuous cavity comprises a preheating chamber, a reaction chamber and a cooling chamber which are sequentially arranged, each of the chambers is positioned between two isolating devices, the plurality of isolating devices can ensure that the plurality of chambers are in an air-tight state, a conveying device is positioned in the plurality of chambers and the isolating devices and used for driving a reacted object to move so as to pass through the plurality of chambers, each of the plurality of chambers is provided with an upper heater which acts towards the top surface of the reacted object to adjust the temperature of the reacted object, and each of the reaction chamber and the cooling chamber is provided with a reaction gas input opening. Therefore, the gas reaction method provided by the invention can ensure the gas reaction of the reacted object and has good efficiency.

Description

technical field [0001] The present invention is related to a device for gas reaction (such as selenization reaction), in particular to a gas reaction continuous chamber and a gas reaction method. Background technique [0002] In the semiconductor manufacturing process, the step of gas reaction is often included. For example, the copper indium gallium selenide glass plate in the CIGS (Copper Indium Gallium Selenide) solar cell, after the glass substrate is sputtered with copper, indium, gallium, selenium and other materials, it needs Heating to a temperature that can cause selenium to generate a gas reaction (that is, a selenization reaction) to synthesize a CIGS semiconductor film on a glass substrate. [0003] The existing way of gas reaction is to set the substrate coated with the reaction material in a vacuum state or in a closed chamber with a specific gas (such as nitrogen), and a heater (such as infrared heating) is installed in the chamber. device), and then, first r...

Claims

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Application Information

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IPC IPC(8): C23C14/56
Inventor 曾昭隆廖科峰邱文鼎赵子铭黄世壬汪宇炎黎胜何文福
Owner 生阳新材料科技(宁波)有限公司
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