Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Plasma processing assembly including hinge assembly

A technology of plasma and hinge body, which is applied in the direction of plasma, electrical components, multi-purpose hand tools, etc.

Active Publication Date: 2016-08-17
LAM RES CORP
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This periodic maintenance can lead to misalignment between the upper and lower treatment bodies

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma processing assembly including hinge assembly
  • Plasma processing assembly including hinge assembly
  • Plasma processing assembly including hinge assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Figure 1 generally depicts one embodiment of a plasma processing assembly for etching material from and / or depositing material on a substrate. Plasma processing assemblies typically include an upper processing body pivotally engaged with a lower processing body by a hinge assembly. According to embodiments described herein, a hinge assembly generally includes a base hinge member pivotally engaged with a hinge body and a self-latch latch pivotally engaged with the base hinge member. Various embodiments of plasma processing assemblies and the operation of plasma processing assemblies are described in greater detail herein.

[0016] common reference Figure 1A and 1B , the plasma processing assembly 10 includes a lower processing body 20 having a lower vacuum chamber 22 formed in the lower processing body 20 for enclosing plasma processing. In plasma processing such as etching or deposition, the lower vacuum chamber 22 can enclose a plasma processing gas, for example, th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In one embodiment, a plasma processing assembly can include an upper processing body coupled to a hinge body and a lower processing body coupled to a base hinge member. The hinge body is pivotally engageable with the base hinge member. A self-latch is pivotally engageable with the base hinge member. When the hinge body rotates about the first axis of rotation, the male latch engaging member can contact the self-latch and rotate the self-latch about the second axis of rotation in a direction opposite to the biasing direction. The self-latching latch can rotate around the second rotation axis in a biasing direction and can prevent the hinge body from rotating around the first rotation axis.

Description

technical field [0001] The present description relates generally to plasma processing assemblies, and more particularly, to plasma processing assemblies including hinge assemblies. Background technique [0002] Plasma processing assemblies can be used to etch material away from substrates formed of, for example, semiconductors or glass. A plasma processing assembly may include a vacuum chamber enclosing a plasma processing gas capable of being ionized and converted into a plasma. For example, a radio frequency source (RF source) can apply radio frequency energy (RF energy) to a process gas to generate a plasma. In some plasma processing assemblies, multiple electrodes and dielectric rings can be concentrically aligned to direct RF energy to desired portions of the substrate. [0003] Furthermore, one electrode can be coupled to the lower processing body and the other electrode can be coupled to the upper processing body. The lower handling body and the upper handling body...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/34H05H1/46
CPCH01J37/32513H01J37/32807H01J37/3288
Inventor 格雷格·塞克斯顿
Owner LAM RES CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products