a mos 2 thin film transistor

Abstract

The invention discloses a MoS2 thin-film transistor which is characterized in that: the MoS2 thin-film transistor is composed of a lower substrate layer, a middle channel layer and an upper gate dielectric layer; the channel layer is a single-layer MoS2 film; the gate dielectric layer is an HfO2 layer with a specific thickness. According to the MoS2 thin-film transistor, transmissivity of the transistor can be increased through changing the thicknesses of the substrate layer and the gate dielectric layer, thereby obtaining the MoS2 thin-film transistor with an ultra high transmissivity, improving aperture ratio of pixels in a thin-film transistor liquid crystal display, improving displaying quality and reducing power consumption.

Description

technical field [0001] The invention relates to a thin film transistor structure, in particular to a controllable high transmittance MoS 2 A thin film transistor structure belongs to the technical field of thin film transistors. Background technique [0002] In the field of display, liquid crystal display (LCD) is the most widely used. The introduction of thin-film transistor switching elements in LCD pixels can greatly improve the performance of display devices. Thin-film transistor liquid crystal display has become the mainstream of display technology. The most widely used thin-film transistors in liquid crystal displays are hydrogenated amorphous silicon thin-film transistors, but the mobility of amorphous silicon materials is low, and the drain current is small, which cannot meet the requirements of high-speed and high-brightness displays, and amorphous silicon materials are opaque. , it will occupy a certain area in the pixel and reduce the pixel aperture ratio. Since...

AI Technical Summary

Problems solved by technology

The most widely used thin-film transistors in liquid crystal displays are hydrogenated amorphous silicon thin-film transistors, but the mobility of amorphous silicon materials is low, and the drain current is small, which cannot meet the requirements of high-speed and high-brightness displays, and amorphous silicon materials are opaque. , it will occupy a certain area in the pixel and reduce the pixel aperture ratio

Since light cannot pass through all pixels, in order to obtain sufficient brightness, it is necessary to increase the light intensity of the light source, thereby increasing power consumption

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