Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Linear evaporation source device

A technology of linear evaporation source and detection device, applied in vacuum evaporation plating, ion implantation plating, metal material coating process, etc., can solve problems such as deterioration, nozzle clogging, film thickness uniformity, etc. Control the effect of flexibility

Inactive Publication Date: 2014-06-18
DONGTAI HI TECH EQUIP TECH (BEIJING) CO LTD
View PDF7 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a linear evaporation source device, which has a simple structure, and can solve the film thickness uniformity caused by partial nozzle blockage after long-term use of the line source in the copper indium gallium selenium co-evaporation process by means of zone temperature control Variation problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Linear evaporation source device
  • Linear evaporation source device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] A linear evaporation source device such as figure 2 As shown, it is used to deposit a thin film on a glass substrate 2, including: a material chamber 8, a nozzle cover 3 and a heating source 5, 6, 7, wherein the nozzle cover 3 is located above the material chamber 8 and has a plurality of nozzles 4 , the nozzle 4 is hole-shaped and evenly distributed on the nozzle cover 3; the heating sources 5, 6, and 7 are evenly distributed under the material chamber 8, and each heating source is a heating wire, between two adjacent heating wires The spacing is 1 / 2 of the diameter of the heating wire, and each heating wire is connected to an independent voltage source and controlled by an independent operating system. The operator can adjust the output voltage of the voltage source through the operating system.

[0020] In actual operation, the uniformity of the film is detected by performing a film thickness test on the prepared film. When it is found that the film thickness in a ...

Embodiment 2

[0022] The technical content in this embodiment that is the same as or similar to that in Embodiment 1 will not be repeated here.

[0023] Different from Embodiment 1, in this embodiment, the nozzles 4 are slit-shaped, evenly distributed on the nozzle cover 3 , and protrude from the nozzle cover 3 . Each heating source is a heating wire array, and the distance between two adjacent heating sources is 1 / 2 of the width of the heating wire array. Each heating source is connected to an independent voltage source and is controlled by an independent operating system. The operator can The output voltage of the voltage source is adjusted by the operating system.

[0024] In this embodiment, the linear evaporation source device also includes three crystal oscillator sensors, and the crystal oscillator sensors correspond to the heating sources 5, 6, and 7 respectively, and are arranged above the nozzle cover 3 near the glass substrate 2 for real-time monitoring of the three crystal oscil...

Embodiment 3

[0026] The same or similar technical content as that of Embodiment 2 in this embodiment will not be repeated here.

[0027] Different from Embodiment 2, in this embodiment, the nozzles 4 are in two shapes of holes and slits, which are evenly distributed on the nozzle cover 3 and protrude from the nozzle cover 3 . In addition, the linear evaporation source device also includes three temperature sensors, and the temperature sensors correspond to the heating sources 5 , 6 , and 7 respectively, and are arranged on the inner wall of the material chamber 8 . The operating system of the heating source is electrically connected to the corresponding crystal oscillator sensor and temperature sensor, and automatically adjusts the voltage applied to the corresponding heating source according to the film thickness fed back by the crystal oscillator sensor and the temperature fed back by the temperature sensor.

[0028] The technical solution of this embodiment can automatically adjust the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an evaporation source device, and particularly relates to a linear evaporation source device in a production process of a copper-indium-gallium-selenium thin-film battery. The linear evaporation source device comprises a material chamber, a nozzle cover and heating sources, wherein the nozzle cover is arranged above the material chamber and is provided with a plurality of nozzles; the number of the heat sources is two or more, the two or more heating sources are evenly distributed below the material chamber, and each heating source has an independent temperature control system. The linear evaporation source device achieves divisional temperature control, and thus the control flexibility of evaporation capacity in the copper-indium-gallium-selenium co-evaporation process is improved; and meanwhile, the influence of nozzle blockage on film-coating uniformity due to long-time use is effectively reduced.

Description

technical field [0001] The invention relates to an evaporation source device, in particular to a linear evaporation source device in the copper indium gallium selenium thin film battery technology. Background technique [0002] Copper indium gallium selenide thin-film solar cells have high photoelectric conversion efficiency, low production cost, stable performance, no light-induced decay, and lower price than traditional crystalline silicon cells, so they have become the research materials of solar cells in various countries. One of the hot spots. [0003] Copper indium gallium selenide thin film solar cells are mainly composed of glass substrate, molybdenum back electrode, copper indium gallium selenide absorbing layer, buffer layer, window layer, antireflection layer and aluminum electrode, wherein the copper indium gallium selenide absorbing layer is the One of the key technologies for preparing high-efficiency copper indium gallium selenide batteries is to obtain a hig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/26
Inventor 于大洋王葛丁建
Owner DONGTAI HI TECH EQUIP TECH (BEIJING) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com