Wafer level applied RF shields

Abstract

An embodiment of a method of forming an on-chip RF shield on an integrated circuit chip in accordance with the present disclosure includes providing a wafer level integrated circuit component wafer having a front side and a back side before singulation; applying a resin metal layer on a back side of the wafer; and then separating the wafer into discrete RF shielded components. It is this resin metal layer on the back side that acts effectively as the RF shield, after singulation, i.e. separation of the wafer, into discrete RF shielded components.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of priority to U.S. Provisional Patent Application No. 61 / 546,862, filed October 13, 2011, entitled "Wafer Level Applied RF Shields," the U.S. The disclosure of the provisional patent application is incorporated herein by reference in its entirety. technical field [0003] The present invention relates generally to the formation of a semiconductor chip, and more particularly, to a structure and method of formation for an on-chip RF shield for an embedded wafer Packaged active, passive or discrete components. Background technique [0004] In some electronic packaging applications, devices and system circuits must be protected from sources of electromagnetic interference (EMI). It is also important to ensure that the device or system circuitry does not emit EMI radiation to systems external to it. Thereby, the ability of such a system to operate as intended in a particular electroma...

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Problems solved by technology

Additionally, surface mount RF shielding can create warpage in the overall chip package shape

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