Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device for removing oxidation fog on silicon polishing surface by impurity absorption source prepared on back of silicon wafer by sand blasting

A technology for polishing surfaces and silicon wafers, applied to used abrasive treatment devices, manufacturing tools, abrasive jetting machine tools, etc., can solve the problems of difficult control, expensive equipment, poor repeatability, etc., and achieve uniform spraying, uniform damage and controllable , the effect of uniform flow

Active Publication Date: 2014-06-11
洛阳杰芯电子科技有限公司
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Internal gettering is mainly to use the oxygen precipitation in the silicon wafer to generate a gettering area to eliminate the oxidation mist on the silicon polishing surface. Because of the expensive equipment and complicated process, the oxygen precipitation in the silicon wafer is required to be evenly distributed, difficult to control, and poor in repeatability. less external application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for removing oxidation fog on silicon polishing surface by impurity absorption source prepared on back of silicon wafer by sand blasting

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the following will be combined with the accompanying drawings and preferred embodiments to eliminate the oxide mist on the silicon polishing surface for the gettering source produced by sandblasting on the back of the silicon wafer according to the present invention. The specific implementation, structure, features and effects of the device are described in detail below.

[0024] The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of preferred embodiments with reference to the drawings. Through the description of specific embodiments, it should be possible to obtain a deeper and more specific understanding of the technical means and effects of the present invention to achieve the intended purpose, but the attached drawings are only f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a device for removing oxidation fog on a silicon polishing surface by an impurity absorption source prepared on the back of a silicon wafer by sand blasting. The device comprises a carborundum nozzle, a nozzle moving device, a dust removal air cabinet, a silicon wafer conveyor belt, a carborundum storage tank and a first dust collecting tank, wherein the carborundum nozzle is arranged on the nozzle moving device and is arranged above the silicon wafer conveyor belt; the carborundum nozzle can move left and right above the silicon wafer conveyor belt under the action of the nozzle moving device; the dust removal air cabinet is arranged above the silicon wafer conveyor belt and extends into the upper surface of the silicon wafer conveyor belt from the upper part of the silicon wafer conveyor belt; the carborundum nozzle is arranged in the dust removal air cabinet; the top of the dust removal air cabinet is provided with through holes; the dust removal air cabinet is communicated with the first dust collecting tank by the through holes through a pipeline; the carborundum nozzle is communicated with the carborundum storage tank by a pipeline.

Description

technical field [0001] The invention relates to the technical field of IC-level silicon single crystal polished wafers, in particular to a device for manufacturing a gettering source by sandblasting the back of a silicon wafer to eliminate oxidation mist on a silicon polished surface. Background technique [0002] IC-grade silicon single crystal polished wafer is the core material for manufacturing large-scale and ultra-large-scale integrated circuits, and is mainly used in high-tech fields such as high-speed computers and aerospace. The micro-defect "oxidation mist" of silicon single crystal polished wafers has always plagued the quality of silicon single crystal polished wafers for high reliability devices. For a long time, people have adopted various methods to eliminate the oxide mist on the surface of silicon polished wafers. The method adopted is mainly through the way of gettering, and there are two kinds of gettering inside and outside gettering. Internal gettering...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24C3/12B24C9/00
Inventor 郭金娥徐信富徐力陈兴邦
Owner 洛阳杰芯电子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products