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Method of forming a semiconductor structure

A semiconductor and substrate technology, applied in the field of semiconductor structure formation, can solve the problems of sensor structure depression, affecting MEMS performance, etc.

Active Publication Date: 2016-02-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
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Problems solved by technology

[0007] However, in the actual operation process, the final sensor structure will have defects such as dents, which directly affect the performance of the subsequent MEMS.

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  • Method of forming a semiconductor structure

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Embodiment Construction

[0038] As mentioned in the background art, during the MEMS manufacturing process, the sensor structure formed above the cavity of the MEMS device will have defects such as depressions, and its structural shape is poor, which in turn affects the performance of the subsequently formed MEMS.

[0039] Analyzing its reasons: Combined with reference Figures 1 to 5 As shown, during the formation of the sensor structure, the sacrificial layer 13 in the cavity of the semiconductor substrate 10 is used to support the device material layer 14 above it. However if Figure 5 As shown, when the sacrificial layer material is filled in the cavity of the semiconductor substrate, voids 16 will be formed in the sacrificial layer material, and the greater the depth, the more voids in the filled sacrificial layer material in the cavity, and the poorer the compactness . When too many voids 16 appear in the sacrificial layer material, the supporting force of the sacrificial layer material will be...

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Abstract

The invention provides a forming method of a semiconductor structure. The forming method comprises the following steps: forming a plurality of grooves inside a cavity region of a semiconductor substrate; oxidizing the semiconductor substrate between adjacent grooves by a thermal oxidation process to form an oxidation layer; forming an apparatus material layer on the surface of a sacrificial layer material and the semiconductor substrate after filling the sacrificial layer material into each groove; etching the apparatus material layer; forming a through hole inside the apparatus material layer; leading in an etchant to the through hole after exposing part of sacrificial layer material or oxidation layer to remove the sacrificial layer inside each groove and the oxidation layer between the grooves, so as to punch each groove and form a cavity inside the semiconductor substrate. According to the technical scheme, the sacrificial layer material and the oxidation layer between the grooves support the apparatus material layer above the cavity region jointly. Therefore, enough support force is provided even if the conditions that holes appear and the like occur between the sacrificial layers inside the grooves. Thus, the defects of deformation and the like of the apparatus material layer are avoided.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for forming a semiconductor structure. Background technique [0002] Micro-Electro-Mechanical-Systems (MEMS for short) is a micro-system that uses micro-fabrication technology to integrate sensors, actuators, and processing control circuits on a chip. [0003] Some highly integrated components of MEMS need to form a cavity in the semiconductor substrate, and form a sensor structure with a through hole, such as a comb-shaped structure, above the cavity. Taking the pressure sensor as an example, if the diaphragm of the pressure sensor is installed on the first surface of the semiconductor substrate in the MEMS process, a cavity needs to be opened on the second surface of the semiconductor substrate, and the sensor structure is formed above the cavity on the second surface. , the pressure to be measured is applied to the diaphragm by the gap in the sensor structure. [0004]...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 刘玮荪
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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