Linear capacitive microwave power sensor based on mems structure
A technology of linear capacitance and microwave power, which is applied in the direction of measuring electric power, instruments, electric vehicles, etc., can solve the problems of microwave signal consumption, etc., and achieve the effect of improving sensitivity, expanding application range, and high sensitivity
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[0016] The present invention will be further described below in conjunction with the accompanying drawings.
[0017] The linear capacitive microwave power sensor of the present invention uses GaAs or Si material as substrate 5, and is provided with microstrip line 1, cantilever beam anchor region 2, cantilever beam 3, sensing electrode 4 on substrate 5, and sensing electrode 4 is formed by sensing The electrode metal 41 and the sensing electrode insulating layer 42 are formed. The cantilever beam anchor area 2 and the sensing electrode 4 are respectively arranged on both sides of the microstrip line. There is a layer of sensing electrode insulating layer 42 above the sensing electrode metal 41. An irregular shape cantilever beam 3 is arranged above the microstrip line 1. The cantilever beam 3 One end of the cantilever is set on the anchor area 2 of the cantilever beam, and the other end is correspondingly suspended above the sensing electrode 4 . The microwave power sensor se...
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