Switchover thin-film transistor with repair function

Abstract

The invention discloses a switchover thin-film transistor with the repair function. The switchover thin-film transistor comprises gate electrodes (1), source electrodes (2) and drain electrodes (3). The switchover thin-film transistor is characterized in that parts of the source electrodes (2) and parts of the drain electrodes (3) are located on the gate electrodes (1), and the source electrodes (2) on the gate electrodes (1) correspond to the drain electrodes (3) on the gate electrodes (1), one end of each source electrode (2) is connected with a signal line and that part of the source electrode (2) is located outside the gate electrode (1), and one end of each drain electrode (3) is connected with a signal line and that part of the drain electrode (3) is located outside the gate electrode (1). In the, switchover thin-film transistor, parts of the source electrodes and the drain electrodes, which are connected with the signal lines, are located outside the gate electrodes, and therefore, the repair can be conducted conveniently. In addition, a plurality of staggered source electrodes and drain electrodes are located on the paired gate electrodes, so the decrease in driving capability caused by repair and the undesirable phenomenon caused by the connection of the drain electrodes to odd and even signal lines are solved. The switchover thin-film transistor has the advantages of skillful design and convenience in manufacturing, and is suitable for promotion and use.

Description

technical field [0001] The invention relates to the technical field of thin film transistors, in particular to a switching thin film transistor with a repairing function which can reduce defective rate and prevent the drive ability from dropping after repair. Background technique [0002] In the field of liquid crystal display manufacturing, switching thin film transistors (Switch TFTs) are usually used as switching elements when driving panels. Panels with switching thin film transistors (Switch TFTs) can save troubles such as terminal cutting or laser cutting. manufacturing steps. Currently commonly used switching thin film transistors (Switch TFT) such as figure 1 As shown, the source 2 and the drain 3 are both located on the gate 1, one end of the source 2 is inserted into the open end of the drain 3, the other end of the source 2 is connected to the signal line, and the closed end of the drain 3 is It is also connected to the signal line; in order to increase the dri...

AI Technical Summary

Problems solved by technology

Currently commonly used switching thin film transistors (Switch TFT) such as figure 1 As shown, the source 2 and the drain 3 are both located on the gate 1, one end of the source 2 is inserted into the open end of the drain 3, the other end of the source 2 is connected to the signal line, and the closed end of the drain 3 is It is also connected to the signal line; in order to increase the driving capability of the switching thin film transistor, the area of ​​the gate 1 is usually enlarged, and the source 2 and the drain 3 are designed to be long and flat. The switching thin film transistor (Switch TFT) has a high probability of poor performance due to its large area. For example, a short circuit between the source 2 and the drain 3 will cause false bright lines.

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