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A kind of preparation method of laminated electrode

A technology of laminated electrodes and reflective layers, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of reduced light output performance of semiconductor light-emitting devices, lower reflectivity of contact electrodes, etc., to improve light output characteristics and avoid voids Effect

Active Publication Date: 2016-03-02
LIYANG TECH DEV CENT
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Problems solved by technology

Due to the difference in surface energy, a coalescence effect occurs between the contact electrode and the semiconductor during annealing, resulting in the formation of multiple voids at the interface between the semiconductor and the contact electrode, and the presence of such voids reduces the reflection of the contact electrode efficiency, which reduces the light output performance of semiconductor light emitting devices

Method used

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  • A kind of preparation method of laminated electrode

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Embodiment Construction

[0018] see figure 1 , the preparation method of the laminated electrode proposed by the present invention comprises the following steps in turn:

[0019] (1) Evaporating the reflective layer 2 on the surface of the semiconductor light emitting unit 1;

[0020] (2) Evaporating the barrier layer 3 on the surface of the reflective layer 2;

[0021] (3) Sputtering on the surface of the barrier layer 3 to form the coalescence inhibiting layer 4;

[0022] (4) Sputtering the oxidation barrier layer 5 on the coalescence inhibiting layer 4 .

[0023] Wherein, in step (1), when the degree of vacuum is less than 1×10 -6 The reflective layer 2 was evaporated under the condition of Torr. First put the semiconductor light-emitting unit into the evaporation chamber, and evacuate until the vacuum degree is less than 1×10 -6 When torr, start the evaporation process, sequentially evaporate TiO 2 Layer 21, Ti 3 o 5 Layer 22 and Ta 2 o 5 Layer 23; after evaporation finishes, obtain the ...

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Abstract

The invention discloses a method for manufacturing a laminated electrode on a light-emitting device. The method sequentially includes the following steps: (1) plating the surface of a semiconductor light-emitting unit with a reflection layer in an evaporation mode, (2) plating the surface of the reflection layer with a barrier layer in an evaporation mode, (3) sputtering the surface of the barrier layer to form a coalescence suppression layer, and (4) sputtering the coalescence suppression layer with an oxidation shielding layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light-emitting devices, in particular to a method for preparing laminated electrodes on a light-emitting device. Background technique [0002] A conventional semiconductor light emitting device (such as an LED) includes a semiconductor layer light emitting unit sequentially formed on a sapphire substrate and a contact electrode on the semiconductor light emitting unit. Generally speaking, a single-layer metal material is generally used for the contact electrode, and an ohmic contact is formed by contacting the semiconductor with the single-layer metal material, thereby forming an electrode of a light-emitting device. However, the ohmic contact performance of the contact electrode made of this single-layer metal material is not satisfactory. Because the surface energy of the semiconductor and the surface energy of the metal material (such as Ag) used to form the contact electrode are usually...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/40H01L33/00
CPCH01L33/38H01L33/40H01L33/405H01L33/42H01L2933/0016
Inventor 丛国芳
Owner LIYANG TECH DEV CENT
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