MOSFET-based power driving circuit

A power drive circuit and circuit technology, applied in the direction of output power conversion devices, electrical components, etc., can solve problems such as difficult to meet the requirements of the driver, and achieve the effect of low power consumption, light weight and low power consumption

Inactive Publication Date: 2014-01-22
BEIJING RES INST OF PRECISE MECHATRONICS CONTROLS +1
View PDF8 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current high-power switching devices are still dominated by IGBTs, and it is difficult to meet the requirements of future drivers for power switching devices.
[0003] Compared with IGBT, MOSFET has the advantag...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MOSFET-based power driving circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0018] Such as figure 1 As shown, a MOSFET-based power drive circuit includes an optocoupler isolation circuit 1, a driver chip 2, a totem pole output circuit and a MOSFET tube, wherein the PWM signal is connected to the first lead of the optocoupler isolation circuit 1 whose model is TLP521. pin and the second pin, the third pin of the optocoupler isolation circuit 1 is grounded, and the fourth pin is connected to the input second pin and the fourth pin of the driver chip 2 of the model UCC27524 produced by TI Company, wherein, PWM is a pulse width modulation signal that controls the switching frequency of the MOSFET, and mainly controls the turn-on and turn-off time of the MOSFET; the third pin of the driver chip 2 is grounded, and the sixth pin is connected to the power supply of the driver chip 2, and the driver chip 2 2 The firs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the electromechanical servo system motor driving technical field, and particularly discloses an MOSFET-based power driving circuit. The driving circuit includes an optical coupling isolation circuit, a driving chip, totem pole output circuits and MOSFETs; PWM signals are accessed into the input end of the optical coupling isolation circuit; the output end of the optical coupling isolation circuit is connected with an input end of the driving chip; two output ends of the driving chip are respectively connected with the gates of an MOSFET B and an MOSFET A through two totem pole output circuits in mirror symmetry, wherein the MOSFET B and the MOSFET A are in series connection, and therefore, the MOSFET B and the MOSFET A can be switched on and switched off simultaneously. With the MOSFET-based power driving circuit of the invention adopted, the application of the MOSFETs in a high-power field can be realized, and the monopoly of IGBTs in the field can be broken; and the miniaturization, light weight and low power consumption of servo drives can be realized.

Description

technical field [0001] The invention belongs to the technical field of electromechanical servo system motor drive, and in particular relates to a MOSFET-based power drive circuit. Background technique [0002] With the development of power electronic devices, electromechanical servo technology rises rapidly. Especially in the field of aerospace, the requirements for miniaturization, light weight, fast response and low power consumption of high-power electromechanical servo drives are getting higher and higher. However, the current high-power switching devices are still dominated by IGBTs, and it is difficult to meet the requirements of future drivers for power switching devices. [0003] Compared with IGBT, MOSFET has the advantages of small size, light weight, fast switching speed, and low power consumption. It is especially suitable for aerospace systems that have strict requirements on volume, weight, and power consumption. Super power like IGBT. Contents of the inven...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H02M1/092
Inventor 李旭东郑再平黄玉平王春明姜丽婷
Owner BEIJING RES INST OF PRECISE MECHATRONICS CONTROLS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap