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Micro LED array device for display and lighting and preparation method

An LED array, miniature technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as inability to adapt to needs, difficulty in reducing the size of light-emitting units, and resolution limitations.

Active Publication Date: 2016-01-13
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention solves the problem that the size of the light-emitting unit of the LED in the existing LED microdisplay is difficult to be made small, resulting in a limited resolution and the inability to meet the needs. The purpose of the present invention is to provide a micro LED array device for display and illumination and Preparation

Method used

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  • Micro LED array device for display and lighting and preparation method
  • Micro LED array device for display and lighting and preparation method
  • Micro LED array device for display and lighting and preparation method

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specific Embodiment approach 1

[0027] Specific implementation mode 1. Combination Figure 1 to Figure 8 Describe this embodiment mode; the micro-LED array device for display and illumination described in this embodiment mode includes: a light-transmitting layer 1, a light-emitting layer 2, a reflective layer 3, a substrate 4, an upper electrode 5, an upper electrode lead 9, Lower electrode 6 , lower electrode leads 10 , diaphragm 7 , microlens 8 , adhesive material 12 and substrate 11 .

[0028] The light-transmitting layer 1, the light-emitting layer 2, the reflective layer 3, the substrate 4 and the micro-lens 8 form a square or rectangular or circular or other shaped LED light-emitting unit. The upper surface of the reflective layer 3 is the luminous layer 2 , the light-transmissive layer 1 and the microlens 8 in sequence, and the lower surface of the reflective layer 3 is the substrate 4 . The LED light-emitting units are uniformly arranged to form a light-emitting unit array. Between the light-emitti...

specific Embodiment approach 2

[0031] Specific embodiment two, combine Figure 9 Describe this embodiment mode, this embodiment mode is the manufacturing method of the micro-LED array device used for display and lighting described in the first specific embodiment mode, this embodiment mode adopts a top-down manufacturing method, that is, the front structure is fabricated first, and then , then protect the front structure and prepare the back structure; the specific process is:

[0032] A. Cleaning and front protection of light-emitting chips:

[0033]a) The substrate material used in this embodiment is a light-emitting chip, and the light-emitting chip used is composed of a light-transmitting layer, a light-emitting layer, a reflective layer and a substrate, such as Figure 9 as shown in a.

[0034] b) Cleaning the light-emitting chip. Then prepare a layer of protective film on the upper surface of the light-emitting chip, that is, the upper surface of the light-transmitting layer, such as Figure 9 as ...

specific Embodiment approach 3

[0060] Specific Embodiment 3. This embodiment is an example of the method for preparing a micro-LED array device for display and lighting described in Specific Embodiment 2:

[0061] 1. Cleaning and front protection of light-emitting chips:

[0062] a. The light-emitting chip used in the present invention is an AlGaInP-LED epitaxial wafer, which is composed of a light-transmitting layer, a light-emitting layer, a reflective layer and a substrate, and the thickness of the light-emitting chip is 200 μm to 1000 μm.

[0063] b. The material of the upper protective film is silicon dioxide or silicon nitride or a composite film composed of silicon dioxide and silicon nitride or metal or organic material or inorganic material or other film materials that can play a protective role. The preparation method of the protective film is electron beam evaporation, radio frequency sputtering, magnetron sputtering, sol-gel method or other film growth methods.

[0064] 2. Preparation of the up...

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Abstract

The invention discloses a minitype LED array device for displaying and lighting and a preparation method, relates to the technical field of LEDs, and solves the problems that in an LED micro display manufactured conventionally, the size of a lighting unit is hard to be small, the resolution ratio is caused to be limited, and the requirements cannot be adapted. The operation processes of the device are that current is injected from upper electrodes and outflows from lower electrodes, an electric field is formed in the device, the positive and negative current carriers carry out recombination luminescence on luminous layers, part light passes through photic layers upwards, and is outshot from micro lens, and part light reach reflective layers downwards, is reflected by the reflective layers, penetrates through the luminous layers and the photic layers, and is outshot from the micro lens. As the luminous principle of the luminous device is the current carrier compound luminescence in p-n junction, the nonlinear characteristic of current voltage of a diode is provided; the luminous brightness is provided with the nonlinear characteristic along with the intensity of the injection current. Through the control of the brightness and the darkness of a pixel element by the circuit, the luminous display is realized.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to an LED integrated chip and a manufacturing method thereof. Background technique [0002] At present, micro-display devices have become the focus of attention of all scientific and technological powers by virtue of their unique advantages. LED microdisplays have many unique advantages, such as active light emission, ultra-high brightness, long life, low operating voltage, high luminous efficiency, fast response, stable and reliable performance, and wide operating temperature range. The traditional manufacturing method is to arrange multiple single-tube LED chips on the base, and then wire and package. Affected by the base, it is difficult to reduce the size of the light-emitting unit of the display device manufactured by this method, so the resolution is limited to a certain extent, and it does not meet the development needs of miniaturization and clarity in the future. Combining s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/00
Inventor 王维彪梁静秋梁中翥田超秦余欣吕金光包兴臻
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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