Multilevel particle filter used in MOCVD device

Abstract

The invention discloses a multilevel particle filter used in a MOCVD device. The multilevel particle filter comprises a tank body, a gas inlet, and a gas outlet. The tank body comprises a bottom cover, multiple levels of tank bodies connected in series, and an upper cover. A front-level flange is arranged on an upper-end flange of a front-level tank body of the multiple levels of tank bodies. A filtering core is arranged in each level of tank body of the multiple levels of tank bodies. A cylindrical cover is arranged at a flange plate bottom end face of the front-level flange. The filtering core in the front-level tank body is a metal filtering core which is positioned on the upper part of the front-level flange cylindrical cover. A liquid cooling system is arranged on the lower part of the cylindrical cover. The gas inlet, a channel formed between the outer wall of the front-level flange cylindrical cover and the inner wall of the tank body, the inner cavity of the front-level flange cylindrical cover, the inner cavities of the rest levels of tank bodies, and the gas outlet communicate with each other, such that a gas channel is formed. The filter is easy to disassemble, and provides good cooling and filtering effects. The filter is safe to clean. With the filter, dusts and impurities in a MOCVD reaction chamber can be prevented from entering downstream valves and vacuum pumps.

Description

technical field [0001] The invention relates to the field of filtering devices, in particular to a multi-stage particle filter used in a vacuum system in MOCVD equipment. Background technique [0002] MOCVD uses metal-organic compounds of group III and hydrides of group V elements as crystal growth source materials, and conducts vapor phase epitaxy on the substrate by thermal decomposition reaction to grow various III-V group compound semiconductors and their multivariate solid solutions. Devices for thin layers of single crystal materials. [0003] The epitaxial growth of thin-layer materials needs to be carried out in a high-temperature vacuum state. The reaction by-products and unreacted substances generated in the reaction chamber will enter the vacuum system. In order to purify the gas and protect the vacuum dry pump, in the vacuum dry pump The front end of the intake valve is equipped with a filter. The ordinary filter adopts the structure of one or more filter elemen...

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Problems solved by technology

[0003] The epitaxial growth of thin-layer materials needs to be carried out in a high-temperature vacuum state. The reaction by-products and unreacted substances generated in the reaction chamber will enter the vacuum system. For the purpose of purifying the gas and protecting the vacuum dry pump, the vacuum dry pump The front end of the intake valve is equipped with a filter. Ordinary filters use a single-stage structure of one or more filter elements to filter. However, due to the particularity of the MOCVD process, the reaction temperature can reach up to 1200 ° C. Vacuum dry pump The pumping speed is 85L / S, the high-temperature gas will pass through the filter quickly without being deposited, and the filtering effect is not ideal, which will cause blockage or even immeasurable damage to the ball valve, throttling butterfly valve and vacuum pump in the vacuum system

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