SOI (Silicon On Insulator) device for inhibiting current leakage of back gate due to radiation and preparation method thereof

Abstract

The invention discloses an SOI (Silicon On Insulator) device for inhibiting current leakage of a back gate due to radiation and a preparation method thereof. The SOI device comprises a semiconductor substrate, an oxygen buried layer, a body region, a gate region, a source region and a drain region, a gate side wall and an LDD (Lightly Doped Drain) region, wherein the thickness of the oxygen buried layer under the body region of the SOI device is below 10nm, and a highly-doped oxygen-buried charge control layer is arranged between the oxygen buried layer under the body area and the substrate. The invention has the advantages that the thickness of the oxygen buried layer under the body region is reduced to be below 10nm, so that the quantity of positive charges trapped into the region is also reduced during radiation; simultaneously electrons in the body region penetrate into the thin oxygen buried layer, the composite probability with the trapped positive charges generated by radiation is increased; and due to the oxygen-buried charge control layer, the influence of the trapped positive charges radiated in the buried oxygen on the potential of the body region is reduced. The radiation response of the SOI device is effectively improved by utilizing the simple preparation method under the premise of no influencing the conventional electrical properties.

Description

technical field [0001] The invention relates to the field of micro-electromechanical systems, in particular to an SOI device capable of suppressing back gate leakage current caused by radiation and a preparation method thereof. Background technique [0002] Compared with traditional bulk silicon devices, Silicon-On-Insulator SOI field effect transistors have the advantages of small parasitic capacitance and low device power consumption, and SOI devices eliminate the latch-up effect, enabling high-performance ultra-large Large-scale integrated circuits, high-speed storage devices, low-power circuits, high-temperature sensors and other fields have extremely broad application prospects. However, when the electronic system composed of SOI devices is used in space radiation environment, nuclear radiation environment, simulated source environment and ground radiation environment, although the buried oxide layer suppresses the interference of substrate pulse current, charged ions s...

AI Technical Summary

Problems solved by technology

Holes generated by radiation ionization damage are trapped in the buried oxide layer, causing the channel under the back gate to invert, resulting in a back gate leakage channel, resulting in increased off-state leakage current and device power consumption

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