Array substrate row driving circuit

Abstract

The invention provides an array substrate row driving circuit. The driving circuit comprises multiple array substrate row driving units, wherein an n-level array substrate row driving unit of the array substrate row driving circuit comprises an n-2 level signal input end (21), an n+2 level signal input end (22), a clock signal first input end (23), a clock signal second input end (24), a first low electric level input end (25), a second low electric level input end (26), a first output end (27), a second output end (28), a pull-up driving unit (32), a pull-up unit (34) and first to third pull-down units (36, 37 and 38). As a second low electric level signal is added, and the second low electric level is utilized to lower a voltage difference Vgs between a gate and a source of the first output end thin-film transistor, relatively low leakage current of the thin-film transistor is obtained, and precise control is achieved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate row driving circuit. Background technique [0002] Liquid crystal displays have many advantages such as thin body, power saving, and no radiation, and have been widely used. Most of the liquid crystal displays currently on the market are backlight liquid crystal displays, which include a liquid crystal panel and a backlight module. The working principle of the liquid crystal panel is to place liquid crystal molecules between two parallel glass substrates, and apply a driving voltage on the two glass substrates to control the rotation direction of the liquid crystal molecules, so as to refract the light from the backlight module to produce a picture. [0003] In recent years, the development of liquid crystal displays has shown a trend of high integration and low cost. One of the very important technologies is the mass production of Gate Drive on Arra...

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Problems solved by technology

like figure 2 As shown, it is the I-V curve (current-voltage curve) of the characteristics of the thin film transistor. It can be seen from this figure that V gs When it is 0V, the current flowing through the thin film transistor is still in the linear region, and the leakage current of the thin film transistor is relatively large, which is difficult to achieve precise control, which is not conducive to the display quality of the liquid crystal display

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