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A soldering substrate for electronic products and its preparation method

A technology for electronic products and substrates, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of complex process, low solder quantity control accuracy, low chip welding positioning accuracy, etc., to achieve good flatness, high precision, Good welding performance

Active Publication Date: 2016-08-17
NO 43 INST OF CHINA ELECTRONICS TECH GRP CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In recent years, the optoelectronic communication market has shown a rapid growth trend, and the technical requirements are getting higher and higher. For example, in the field of high-end optical communication, the mounting and positioning accuracy of chips is required to be controlled at the micron level, and prefabricated solder and printing methods are used to prepare The accuracy of the solder pattern cannot be satisfied. The coating process and prefabricated solder can only produce alloys with a fixed ratio, and only thicker alloys can be produced. When installing the chip, the coating process must first manually coat the solder on the substrate, and then apply it For chip soldering, the process is complicated and the control accuracy of the amount of solder is low. The prefabricated solder has a low accuracy of the solder pattern due to the thick alloy solder, which leads to low soldering positioning accuracy of the chip.

Method used

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  • A soldering substrate for electronic products and its preparation method
  • A soldering substrate for electronic products and its preparation method
  • A soldering substrate for electronic products and its preparation method

Examples

Experimental program
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Embodiment 1

[0022] Such as figure 1 As shown, the electronic product welding substrate of the present invention comprises an alumina ceramic substrate 1, a metallized pattern layer 2 is provided on the substrate 1, and a gold-tin thin film layer 4 is arranged on the metallized pattern layer 2, and the gold-tin The thin film layer 4 is a multilayer structure in which gold layers and tin layers are alternately compounded and the uppermost layer is a gold layer. A barrier layer 3 is provided between the layer 4 and the metallized pattern layer 2. The barrier layer 3 is a three-layer metal layer structure, and the lower layer film 31 is composed of a tungsten-titanium alloy (WTi) layer, and a nickel-platinum-palladium layer. The middle film composed of alloy (NiPtPd) layer, the upper film composed of gold (Au) layer; the thickness of the tungsten-titanium alloy layer is 0.05-0.15µm, the thickness of the nickel-platinum-palladium alloy layer is 0.2-1µm, and the thickness of the gold layer is 0...

Embodiment 2

[0041] Such as figure 2 Shown, the welding substrate for electronic product of the present invention comprises alumina ceramic substrate 1, and substrate 1 is provided with metallized pattern layer 2, is provided with gold-tin film layer on this metallized pattern layer 2, and this gold-tin film layer The layer is a gold-tin alloy (AuSn) layer 4' with a thickness of 1.5-5µm; a barrier layer is provided between the AuSn layer 4' and the metallized pattern layer 2, and the barrier layer is a platinum-palladium alloy (PtPd) layer 3', Layer thickness 0.5-1µm. The barrier layer of the present invention prevents the interdiffusion between the gold-tin film and the underlying metallization pattern layer during the soldering process. The gold-tin alloy layer 4' can adopt commonly used gold-tin components 70 / 30, 73 / 27 or 80 / 20; in order to make welding more effective, a gold layer is also provided on the entire area of ​​the gold-tin alloy layer 4' 5. The method described in Exampl...

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Abstract

The invention discloses a welding substrate for electronic products, which comprises a substrate, a metallized pattern layer is arranged on the substrate, a gold-tin thin film layer is arranged on the metallized pattern layer, and a gold-tin thin film layer is arranged between the gold-tin thin film layer and the metallized pattern layer. The barrier layer is a single-layer metal film layer or a composite metal film layer; the gold-tin thin film layer is a gold-tin alloy layer, or a multilayer structure in which gold layers and tin layers are alternately compounded. The film substrate of the present invention has high graphic line precision and good surface flatness of the film layer, and can directly solder and position the chip without prefabricated solder, can ensure the installation and positioning accuracy of the chip, and is suitable for optoelectronic products such as high-power LED optical communications. At the same time, the ratio of the amount of gold and tin in the film substrate of the present invention can be adjusted according to the difference of the chip to be welded on the substrate film substrate, so that the soldering performance of the chip is better.

Description

technical field [0001] The present invention relates to the field of microelectronics and optoelectronic products, in particular to substrate substrates used for photoelectric communication, high-power lasers and LED circuit modules, soldering substrates for electronic products prepared by thin-film technology as solders, and soldering substrates for electronic products. Preparation. Background technique [0002] In the manufacturing process of high-power microelectronic devices, the function of the product is getting stronger, the integration is getting higher and higher, the size is getting smaller and smaller, the power density is getting higher and higher, and the heat dissipation problem is becoming more and more prominent and becomes the bottleneck of the product. Considering the large heat generated by the chip during operation, its structure needs to have a good heat dissipation channel, which is usually established by brazing the chip on the shell with a solder allo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/488H01L23/14H01L21/48
CPCH01L23/488H01L23/4924H01L2224/2908H01L2224/29111H01L2224/29144
Inventor 汪涛李佳李林森宋泽润余传杰赵兹君陶允刚
Owner NO 43 INST OF CHINA ELECTRONICS TECH GRP CETC
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