Phase change resistor in phase change memory and forming method thereof

Abstract

The invention provides a phase change resistor in a phase change memory and a forming method thereof. The forming method of the phase change resistor in the phase change memory includes the steps that a substrate is provided, a bottom electrode is formed in the substrate, the upper surface of the bottom electrode is even with the upper surface of the substrate, a first medium layer and a second medium layer are sequentially formed on the substrate, a through hole is formed in the first medium layer, a groove is formed in the second medium layer, a part of the bottom electrode is exposed from the bottom of the through hole, the through hole is exposed from the groove, the width of the groove is larger than the bore diameter of the through hole, the groove extends along the bit line direction of the phase change memory, phase change materials are filled in the through hole and the groove so that the phase change resistor can be formed, and the upper surface of the phase change resistor is even with the upper surface of the second medium layer. According to the technical scheme, as adjacent memory units are isolated through medium layers, mutual interference between the adjacent memory units can be avoided, and the phase change materials are easy to fill. In addition, the problem of stripping of the phase change materials can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a phase-change resistor in a phase-change memory and a forming method thereof. Background technique [0002] With the development of information technology, the demand for storage devices is increasing, which promotes the development of storage devices in the direction of high performance, low voltage, low power consumption, high speed and high density. Phase change memory (PCRAM, phase change Random Access Memory) is a new generation of non-volatile memory developed on the basis of CMOS integrated circuits, which uses one or more elements of Group V or Group VI in the periodic table of elements The alloy is used as a phase-change resistor, and the phase-change resistor is used as a storage unit. The phase-change resistor can quickly change from an ordered crystalline state (low resistance) to a disordered amorphous state ( resistance is much higher). A typical phase cha...

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Problems solved by technology

[0007] The problem that the present invention solves is the method for forming phase-change resistance in the prior art, and the storage state of adjacent stor

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