A double-heater structure for a large-scale sapphire furnace

Abstract

The invention discloses a double-heater structure of a big-size sapphire furnace. The double-heater structure comprises a side heater and a bottom heater, wherein the side heater takes two copper rings which are axially connected through an insulating part as electrodes including a first copper electrode and a second copper electrode, a plurality of U-shaped tungsten sticks are peripherally mounted on the two copper electrodes respectively to form a tubular structure to serve as a heating element, and the U-shaped tungsten sticks are fixed on the first copper electrode and the second copper electrode respectively as per an axial symmetrical arrangement mode; the bottom heater adopts double helix tungsten filaments to build concentric heating rings as per thermal field requirements, the double helix tungsten filaments are connected to a battery lead plate through double helix connecting screws, and the bottoms of the double helix tungsten filaments are supported by U-shaped supporting tungsten sticks. The double-heater structure of the big-size sapphire furnace provided by the invention can create favorable thermal field conditions for growth of big-size sapphire crystal, and the production cost of the sapphire furnace is effectively reduced at the same time.

Description

technical field [0001] The invention relates to the technical field of sapphire crystal growth equipment, in particular to a double-heater structure of a large-scale sapphire furnace. Background technique [0002] At present, sapphire substrate companies and LED epitaxy manufacturers use 2-inch and 4-inch substrates as the main substrates. As LEDs become more and more widely used, epitaxy manufacturers at home and abroad gradually introduce 4-inch and 6-inch epitaxy production processes and equipment. , 4-inch and 6-inch sapphire substrates will promote a substantial reduction in cost, and the demand for large-size sapphire substrates will also rapidly increase, thereby promoting a surge in the market demand for large-scale sapphire crystal growth furnaces. [0003] During the crystal growth process, a certain axial gradient and radial gradient are required. The traditional sapphire kneading furnace can only meet the growth of small-sized sapphire crystals, and once the cry...

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Problems solved by technology

[0005] The existing sapphire kneading furnaces all use birdcage tungsten rod heaters, but there are the following disadvantages: the structure of the temperature field is fixed after the installation of the heater and the insulation screen, and the axial and radial temperature gradients of the temperature field have been finalized , that is, there are less controllable adjustment methods for the thermal field after installation, which makes it difficult to grow crystals in the sapphire furnace using this thermal field;

[0007] Using two sections of tungsten wire mesh on the side + tungsten wire mesh on the bottom for heating can better control the temperature gradient, but there is a problem of uneven radial temperature gradient at the bottom and expensive manufacturing and processing costs

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