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EEPROM (Electrically Erasable Programmable Read-Only Memory) circuit, data readout method and nonvolatile memory

A circuit and data technology, applied in the field of memory, can solve the problems of false readout and large fluctuation of readout time, and achieve the effect of eliminating parasitic parameters, avoiding fluctuation of readout time change, and avoiding the phenomenon of false readout.

Active Publication Date: 2013-04-10
APEX MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of this, the present invention provides an EEPROM circuit and a non-volatile memory, which solves the problems of large fluctuations in readout time and misreadout in the prior art

Method used

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  • EEPROM (Electrically Erasable Programmable Read-Only Memory) circuit, data readout method and nonvolatile memory
  • EEPROM (Electrically Erasable Programmable Read-Only Memory) circuit, data readout method and nonvolatile memory
  • EEPROM (Electrically Erasable Programmable Read-Only Memory) circuit, data readout method and nonvolatile memory

Examples

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Embodiment 1

[0041] Please refer to the attached image 3 , briefly introduce the structure and working principle of the memory cell in the EEPROM circuit, wherein the floating gate tunnel oxide transistor 12 includes a source 121, a drain 122 and two overlapping polysilicon gates 123a, 123b. Wherein, the lower gate is a floating gate 123a, which is insulated from the outside and used for storing charges. The upper gate is the control gate 123b, which has a lead wire connected to the erasing terminal 23 . A thin tunnel oxide layer 124 is disposed between the floating gate 123 a and the drain 122 .

[0042] According to the charge on the floating gate 123a, the type of data stored in the memory cell can be defined. For example, when there is no charge in the floating gate 123a, the data stored in the memory cell is defined as "0". When there is charge in the floating gate 123a, it means that the stored data is "1". It should be noted that the definitions of stored data in different EEPRO...

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Abstract

The invention provides an EEPROM (Electrically Erasable Programmable Read-Only Memory) circuit. The EEPROM circuit comprises a memory unit array, an erasing circuit and a readout circuit, wherein the readout circuit comprises a reference unit readout circuit and a data unit readout circuit; a reference unit is controlled by the erasing circuit to write the preset data, and the readout current of a data unit and the output current of the reference unit readout circuit are compared, so that the data memorized in the data unit is obtained. By adopting the EEPROM circuit provided by the invention, the influences on the power voltage caused by external environments such as parasitic parameters and process variation can be effectively removed, and thus the problems of the fluctuation of the readout time change and the phenomenon of error readout can be avoided.

Description

technical field [0001] The invention relates to the field of memory, more specifically, relates to an EEPROM circuit, a data reading method and a nonvolatile memory. Background technique [0002] With the continuous development of technology, memory has been widely used. There are many types of memory, among which non-volatile semiconductor memory is widely used due to its data storage characteristics. [0003] see figure 1 , is a structural diagram of the minimum storage unit in the non-volatile semiconductor memory, the storage unit 10 includes a selection transistor 11 and a floating gate tunnel oxide transistor 12 . Wherein, the gate of the selection transistor 11 is connected to the word line 21 , and the drain or source is connected to the bit line 23 ; the control gate of the floating gate tunnel oxide transistor is connected to the erasing terminal 23 . [0004] EEPROM circuits in the prior art such as image 3 As shown, it includes a memory cell array 20 , a row...

Claims

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Application Information

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IPC IPC(8): G11C16/06G11C16/26
Inventor 王雄伟
Owner APEX MICROELECTRONICS CO LTD
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