Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Insulated gate bipolar transistor (IGBT) fault detection circuit

A fault detection circuit and circuit technology, applied in the direction of measuring electrical variables, measuring current/voltage, measuring devices, etc., can solve problems such as breakdown

Inactive Publication Date: 2013-04-10
ZHEJIANG UNIV
View PDF6 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the IGBT series circuit, there are many reasons for IGBT damage, but no matter what causes the IGBT damage, the IGBT collector-emitter will be broken down, and its collector-emitter voltage will become 0

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Insulated gate bipolar transistor (IGBT) fault detection circuit
  • Insulated gate bipolar transistor (IGBT) fault detection circuit
  • Insulated gate bipolar transistor (IGBT) fault detection circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0024] figure 1 It is a block diagram of the overall structure of the present invention. Including IGBT damage detection circuit, IGBT overcurrent detection circuit, IGBT overvoltage detection circuit, signal feedback circuit; the two detection terminals of IGBT damage detection circuit are respectively connected with the collector and emitter of the detected IGBT; IGBT overcurrent detection circuit The two detection terminals of the IGBT are respectively connected to the collector and emitter of the detected IGBT; the two detection terminals of the IGBT overvoltage detection circuit are respectively connected to the collector and emitter of the detected IGBT; the overcurrent of the IGBT damage detection circuit The detection signal output terminal is connected to the first input terminal of the signal feedback circuit; the damage detection signal outp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an insulated gate bipolar transistor (IGBT) fault detection circuit which comprises an IGBT damage detection circuit, an IGBT over-current detection circuit, an IGBT overvoltage detection circuit and a signal feedback circuit. Three detection circuits can detect voltage of an IGBT collector electrode - emitting electrode through high flexibility voltage comparers, the voltage is compared with reference voltage set by the voltage comparers, and detection results of all detection circuit can be input into the signal feedback circuit in a transistor-transistor logic (TTL) electrical level mode. When any fault of damage, over current and overvoltage of the IGBT happens, optical fiber light emitting heads in the feedback circuit can all be triggered. The achieved fault feedback signals can be separated and transmitted by optical fibers to be output by a high speed optocoupler. The IGBT fault detection circuit can detect whether the IGBT is damaged in real time, can detect whether over current of the IGBT happens in real time, can detect whether overvoltage of the IGBT happens, and can quickly output fault feedback signals when any fault happens.

Description

technical field [0001] The invention relates to a fault detection circuit, in particular to an IGBT fault detection circuit. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a power device composed of power MOSFET and GTR. It is widely used in various Pulse power equipment: such as radar transmitters, high-voltage pulse electric field sterilization equipment, etc. With the continuous improvement of IGBT voltage, current, and frequency levels, the price of IGBT is also getting higher and higher. The IGBT itself is a device with poor overvoltage and overcurrent resistance. During use, it is often damaged due to overcurrent and overvoltage for a very short time. [0003] On the other hand, the current research on IGBT series technology is more and more extensive, but it mainly focuses on: ① dynamic voltage equalization of each series IGBT during turn-on and turn-off; ② transmission time monitoring of IGBT drive circuit. The main purpose of these two ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R31/26G01R19/165
Inventor 王剑平余琳江婷婷黄康王海军盖玲
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com