A finfet and an application circuit using the finfet

Abstract

The invention provides an FINFET (Fin-Field-Effect-Transistor) and an application circuit applying the FINFET. The FINFET comprises a source electrode, a gate electrode, a drain electrode and a bias electrode, wherein the source electrode and the drain electrode are formed on a substrate, a channel area is formed between the source electrode and the drain electrode, a gate-oxide layer is formed at the outer side of the channel area, the gate electrode and the bias electrode are formed at the outer side of the gate-oxide layer, and a certain distance is formed between the gate electrode and the bias electrode. Compared with the prior art, the FINFET disclosed by the invention has the advantages that the gate electrode in the prior art is divided into the gate electrode and the polarization electrode, and the bias electrode is connected to offset voltage, so that the leakage between the drain electrode and the source electrode can be reduced when the FINFET is switched off, and meanwhile, the power consumption on the switching on and off of the FINFET can be reduced.

Description

【Technical field】 [0001] The invention relates to the field of semiconductors, in particular to a FINFET and an application circuit using the FINFET. 【Background technique】 [0002] With the continuous evolution of integrated circuit technology, the channel length of field effect transistors (Field Effect Transistor, FET) is continuously reduced. The continuous reduction of the channel length can realize the continuous reduction of the device area, so that more wafers can be produced on the wafer with the same area, thereby reducing the cost of the wafer. The characteristic size of a general process is the minimum channel length. For example, the 28nm process means that the minimum channel length of its field effect transistor is 28nm. When the process evolves below 28nm, the planar process becomes more and more difficult to manufacture. The reason is that when the channel length is too small, the leakage between the drain and source of the device becomes larger and larger,...

AI Technical Summary

Problems solved by technology

In the traditional field effect transistor structure, the gate that controls the passage of current can only control the on and off of the circuit on one side of the gate, which belongs to the planar structure.

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