Thickness tester structure for measuring thickness of wafer during grinding

Abstract

The invention provides a thickness tester structure for measuring the thickness of a wafer during grinding. By the thickness tester structure, a fragment situation caused by the falling of the wafer is avoided, and the process loss is reduced; and during measuring, the measurement errors of the wafer are reduced, and the product yield is improved. The thickness tester structure comprises a base, a micrometer and a wafer, and is characterized in that the base is horizontally arranged; an upright plate is supported on the upper end face of the base; one end of a transverse supporting plate is tightly connected with one side of the upright plate; the micrometer is arranged at one end of the transverse supporting plate; a measuring end of a micrometric screw of the micrometer penetrates through the transverse supporting plate, and then vertically faces the upper end face of the base; a benchmark seat is arranged on the micrometric screw corresponding to the upper end face of the base; the wafer is arranged in a gap between the micrometric screw and the benchmark seat; the upper end face of the wafer is clung to the measuring end of the micrometric screw; and the lower end face of the wafer is clung to the upper end face of the benchmark seat.

Description

Technical field [0001] The invention relates to the technical field of wafer measurement for semiconductor device packaging, in particular to a thickness gauge structure used for measuring the thickness of a wafer during a grinding process. Background technique [0002] Existing thickness gauges such as figure 1 When measuring the thickness of the wafer, the center axis of the wafer 1 must be perpendicular to the measuring support 2, and the micrometer screw 4 of the micrometer 3 is placed horizontally, and the measurement of the reference base 5 and the micrometer screw 4 of the measuring support 2 The measuring support 2 is supported on the base 6. Multi-point measurement is required for measurement. When measuring the thickness of the corners of the wafer, sometimes the measuring end of the micrometer screw 4 of the micrometer 3 cannot clamp the wafer 1 The falling of wafer 1 causes wafer 1 to break, causing serious process loss; when the micrometer 3 clamps the silicon wafer ...

AI Technical Summary

Problems solved by technology

[0002] Existing thickness gauges such as figure 1 , when measuring the thickness of the wafer, the central axis of the wafer 1 must be perpendicular to the measurement support 2, and the micrometer screw 4 of the micrometer 3 is placed horizontally, and the measurement of the reference seat 5 and the micrometer screw 4 of the measurement support 2 The ends are aligned with each other, and the measurement support 2 is supported on the base 6. The measurement needs to take multi-point measurement. When measuring the thickness of the corner of the wafer, sometimes the measurement end of the micrometer screw 4 of the micrometer 3 cannot clamp the wafer 1. The falling of wafer 1 causes wafer 1 to break, causing serious process loss; when the micrometer 3 clamps the blue-coated silicon wafer, because the micrometer 3 is pressed by hand to measure, the blue film will sink and the measurement value will be wrong. In addition, the vertical measurement of wafer 1 will also cause a large measurement error value due to the shaking of wafer 1, which will have a great impact on the control of wafer loading and bonding in the next process, resulting in a decline in product yield

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