Memory programming method and memory cell programming method in memory array

Abstract

The invention is a method for programming a memory and a method for programming memory cells in a memory array. The memory has a first memory cell which has a first S / D zone and shares a second S / D zone with a second memory cell. The second memory cell has a third S / D zone which is relative to the second S / D zone. When the first memory cell is programmed, a first voltage is applied on the control gate of the first memory cell; a second voltage is applied on the control gate of the second memory cell to let the channel zone of the second memory cell be in a slightly open state; a third voltage is applied on the first S / D zone to float the second S / D zone, a fourth voltage is applied on the third S / D zone, and the third voltage and the fourth voltage allow the carrier to flow from the third S / D zone to the first S / D zone to inject the carrier into the charge storage layer of the first memory cell by using source side injection. Because the applied bias voltage is low, the programming speed can be raised, element accumulation degree can be raised, and large memory margin can be achieved.

Description

technical field [0001] The invention relates to the operation of a memory element, in particular to a method for programming memory cells in a memory (array), and a memory device utilizing the method. Background technique [0002] Non-volatile memory (non-volatile memory) has the advantages of multiple data storage, reading, erasing, etc., and the stored data will not disappear after power failure, so many electrical products This type of memory must be available in the computer to maintain the normal operation of electrical products when they are turned on. It has become a memory component widely used in personal computers and electronic equipment. [0003] A typical non-volatile memory device is generally designed to have a stacked-gate structure, including a floating gate (Floating Gate) and a control gate (Control Gate) made of doped polysilicon. The floating gate is located between the control gate and the substrate, and is in a floating state, not connected to any cir...

AI Technical Summary

Problems solved by technology

As the size of the memory and its memory cells becomes smaller and smaller, the punch-through current between the memory cells will become more and more significant, and the punch-through current provided by the unselected memory cells will affect The stability when programming the selected memory cells, while significantly reducing the performance of the memory cells

[0006] It can be seen that the above-mentioned existing memory programming method obviously still has inconvenience and defects in method and use, and needs to be further improved urgently.

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general method has no suitable method to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve

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