Shortwave infrared image detection device adopting up-conversion luminescent material
An image detection and short-wave infrared technology, applied in the field of infrared imaging, achieves the effects of simple structure, wide response spectrum and low cost
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[0010] In the short-wave infrared image detection device using up-conversion luminescent material of the present invention, see figure 2 As shown, the visible light imaging lens 3 is located in front of the visible light photodetector 4 . The up-conversion luminescent material plate 5 is located in front of the visible light imaging lens 3 . The visible light photodetector 4 is a CCD or CMOS digital image sensor with medium resolution (1280×1024) made of silicon semiconductor material. The up-conversion luminescent material used is the sulfide infrared up-conversion luminescent material CaS:Eu 2+ , Sm 3+ . The photodetector drive unit, image storage unit, and image processing unit in the FPGA main control chip are connected to the photodetector, and the image processing unit is also connected to the image storage unit and a communication interface, such as a USB2.0 interface. The FPGA main control chip controls the work of the short-wave infrared image detection device ac...
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