Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Internal power supply voltage generation circuit

A technology of voltage generation circuit and internal power supply, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of increased current consumption and large penetration current, and achieve the effect of suppressing current consumption

Inactive Publication Date: 2012-08-22
SEIKO INSTR INC
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Therefore, there is a problem that when the absolute value of the threshold voltage of the P-type transistor and the N-type transistor constituting the logic circuit 702 deviates slightly, the through current when the logic circuit 702 operates becomes too large, resulting in an increase in current consumption.
[0011] That is, the through current when the logic circuit 702 supplied with the internal power supply voltage DVDD operates depends on the threshold voltages of the P-type transistor and the N-type transistor constituting the logic circuit, resulting in an increase in current consumption.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Internal power supply voltage generation circuit
  • Internal power supply voltage generation circuit
  • Internal power supply voltage generation circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] figure 1 It is a block diagram showing an internal power supply voltage generation circuit according to the first embodiment of the present invention.

[0025] The internal power supply voltage generating circuit of the first embodiment includes an N-type MOS transistor 701 and a voltage source 101 .

[0026] The drain of the transistor 701 is connected to the power supply terminal, and the source of the transistor 701 is connected to the internal power supply voltage output terminal DVDD. The voltage source 101 is connected to the gate of the transistor 701 . The logic circuit 702 as a load is connected to the internal power supply voltage output terminal DVDD.

[0027] Hereinafter, the operation of the internal power supply voltage generating circuit according to the first embodiment of the present invention will be described.

[0028] The transistor 701 steps down the voltage of the voltage source 101 applied to the gate to the internal power supply voltage DVDD ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is an internal power supply voltage generation circuit, with which a through current that flows during the operation of a logic circuit can be prevented from being excessive due to fluctuations in threshold voltage of a P-type transistor and an N-type transistor forming the logic circuit, and current consumption can be suppressed. Provided is an internal power supply voltage generation circuit for generating an internal power supply voltage at an internal power supply terminal and supplying the internal power supply voltage to a logic circuit, the internal power supply voltage generation circuit including a transistor having a source follower configuration for outputting a voltage applied to a gate thereof. A value of the internal power supply voltage is given based on the sum of an absolute value of a threshold voltage of an N-type transistor and an absolute value of a threshold voltage of a P-type transistor.

Description

technical field [0001] The present invention relates to an internal power supply voltage generation circuit for generating an internal power supply voltage of an internal power supply terminal and supplying the internal power supply voltage to a logic circuit. Background technique [0002] A conventional internal power supply voltage generating circuit will be described. Figure 7 It is a block diagram showing a conventional internal power supply voltage generating circuit. [0003] The saturation-connected transistor 701 uses a source follower structure to step down the voltage VDD given to the gate to the internal power supply voltage DVDD and output it. The logic circuit 702 operates depending on the internal power supply voltage DVDD and the ground voltage VSS. [0004] Examples of the logic circuit 702 include a circuit that outputs a high-level or low-level signal, such as an oscillation circuit, a counter that counts the number of input pulses, and the like. [0005...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G05F3/08
CPCG05F3/24G05F3/02
Inventor 杉浦正一
Owner SEIKO INSTR INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products