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Sapphire single crystal furnace

A sapphire single crystal furnace and furnace body technology, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of high production cost, high requirements for the furnace body, and large loss, etc., and achieve cost reduction and production cost reduction , the effect of loss reduction

Inactive Publication Date: 2012-07-18
ANHUI JIANGWEI PRECISION IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the existing technology, most of the sapphire crystallization furnaces used in the production process need to keep the furnace body closed and vacuumize, which requires high requirements on the furnace body and high cost, and such a growth environment grows The sapphire is slightly red or yellow, and the loss of the crucible is very large, high energy consumption, high production cost

Method used

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  • Sapphire single crystal furnace
  • Sapphire single crystal furnace

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Embodiment Construction

[0014] Referring to the accompanying drawings, a sapphire single crystal furnace includes a furnace body 1, a crucible 2 and a heating coil 3, the upper end of the furnace body 1 is provided with an opening 4, from the opening 4 of the furnace body 1 to the furnace body The bottom is fixedly installed with a thermal insulation tube 5, the upper end of the thermal insulation tube 5 is provided with a cover plate 6, and the cover plate 6 is provided with a lifting rod mounting hole 7, and the left and right sides of the lifting rod mounting hole 7 are respectively A nitrogen gas input port 8 and a nitrogen gas discharge port 9 are provided, a support base 10 is fixedly installed on the bottom of the heat preservation cylinder 5, a crucible 2 is fixedly installed on the support base 10, and a layer of quartz ring is wrapped on the outer wall of the crucible 2 11. A heating coil 3 is wound around the quartz ring 11 .

[0015] The thermal insulation cylinder 5 is made of metal tung...

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Abstract

The invention discloses a sapphire single crystal furnace, comprising a furnace body, a crucible and a heating coil, wherein the upper end of the furnace body is provided with an opening, a thermal-insulation barrel is fixedly installed from the opening of the furnace body to the bottom of the furnace body, a cover board is arranged at the upper end of the thermal-insulation barrel, a draw bar mounting hole is arranged on the cover board, a nitrogen input port and a nitrogen exhaust port are respectively arranged at the left side and the right side of the draw bar mounting hole respectively, a support seat is fixedly arranged at the bottom of the thermal-insulation barrel, the crucible is fixedly arranged on the support seat, a layer of a quartz ring is wrapped on an outer wall of the crucible, and the heating coil is wound outside the quartz ring. According to the invention, the loss of the crucible is reduced, energy consumption is saved, the cost is reduced, and a sapphire crystal produced by the sapphire single crystal furnace has pure color.

Description

technical field [0001] The invention relates to a sapphire processing and production equipment, in particular to a sapphire single crystal furnace. Background technique [0002] The basic principle of the pulling method: the pulling method is to heat and melt the raw materials constituting the crystal in a crucible, connect the seed crystal on the surface of the melt to pull the melt, and under controlled conditions, make the seed crystal and the melt at the interface The rearrangement of atoms or molecules is continuously carried out on the surface, and a single crystal is grown by gradually solidifying as the temperature drops. The picture on the right is a schematic diagram of the pulling method. 2. The growth process of the pulling method first puts the raw material of the crystal to be grown in a high-temperature crucible to heat and melt, adjusts the temperature field in the furnace, and makes the upper part of the melt in a supercooled state; then places a grain on t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/20
Inventor 骆方旭张伯琴江豪
Owner ANHUI JIANGWEI PRECISION IND
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