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Double-gate TFT (thin film transistor) substrate and production method thereof

A manufacturing method and substrate technology, applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problems of wasting IC joints and reducing pixel aperture ratio, and achieve the effect of saving costs and preventing green defects

Inactive Publication Date: 2012-07-11
BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This spacing structure not only wastes IC connectors, but also reduces the aperture ratio of pixels

Method used

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  • Double-gate TFT (thin film transistor) substrate and production method thereof
  • Double-gate TFT (thin film transistor) substrate and production method thereof
  • Double-gate TFT (thin film transistor) substrate and production method thereof

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Embodiment Construction

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0021] The double-gate TFT substrate provided by the embodiment of the present invention, such as figure 2 shown, including:

[0022] A glass substrate (not shown in the figure), a horizontal gate line 1 , a mesh Vcom line 4 , a vertical data line 2 , and a pixel unit 5 defined by intersections of the horizontal gate line 1 and the vertical data line 2 . Wherein, each Vcom line of each row of the mesh Vcom line 4 is electrically connected respectively, and t...

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Abstract

An embodiment of the invention provides a double-gate TFT (thin film transistor) substrate and a production method thereof, which relate to the field of liquid crystal display manufacturing. IC (integrated circuit) connectors can be reduced while green defects are prevented, and pixel aperture ratio can be increased. The double-gate TFT substrate comprises a glass substrate, transverse gate lines, meshed Vcom (visual communication) lines and longitudinal data lines. The Vcom lines in each row of the meshed Vcom lines in electrical connection, and the Vcom lines are electrically connected with IC (integrated circuit) elements through Vcom line IC connectors. If the number of the data lines is N, the number of the Vcom line IC connectors is larger than 0 and smaller than N+1. At least one group of the corresponding Vcom lines between each two adjacent rows of the Vcom lines is longitudinally electrically connected. The double-gate TFT substrate and the production method thereof are used for producing TFT substrates.

Description

technical field [0001] The invention relates to the field of liquid crystal display manufacture, in particular to a double-gate TFT array substrate and a method for manufacturing the TFT array substrate. Background technique [0002] TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Transistor-Liquid Crystal Display) uses the change of the electric field intensity sandwiched on the liquid crystal layer to change the orientation of liquid crystal molecules, thereby controlling the intensity of light transmission to display images. Generally speaking, a complete liquid crystal display panel must have a backlight module, a polarizer, a TFT lower substrate, a CF (color filter) upper substrate, and a liquid crystal molecule layer filled in a box composed of these two substrates. There are a large number of pixel electrodes on the TFT substrate, and the on-off and magnitude of the voltage on the pixel electrodes are controlled by the gate connected to the horizontal ...

Claims

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Application Information

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IPC IPC(8): G02F1/1362G02F1/1368G02F1/1333H01L27/12H01L21/77
CPCH01L27/124G02F1/136286G02F2201/121G02F1/1368G02F1/1343
Inventor 薛海林徐宇博李成张继栋
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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