Semiconductor structure and formation method thereof

Abstract

The invention relates to a semiconductor structure, and the semiconductor structure is formed on a first semiconductor layer; the semiconductor structure comprises a main nanometer line, a nanometer line group and two semiconductor substrates; each semiconductor substrate comprises at least two second semiconductor layers, each second semiconductor layer is formed on an insulating layer, and each second semiconductor layer is in one-to-one correspondence with each insulating layer in each semiconductor substrate; the nanometer line group comprises at least two nanometer lines, the main nanometer line and each nanometer line are independent and comprise third semiconductor layers, and the second semiconductor layers as well as the first semiconductor layer and / or the third semiconductor layers are made of different materials; the main nanometer line is connected with the corresponding second semiconductor layer adjacent to the first semiconductor layer; and each nanometer line is connected with each second semiconductor layer in one-to-one correspondence, and the projections, positioned on the first semiconductor layer, of nanometer lines are coincided. In addition, the invention also provides a formation method of the semiconductor structure. The formation method is favorable for increasing integrated level.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] As the critical dimensions of semiconductor structures become smaller and smaller, due to the particularity of structure and performance, the application prospects of nanowires in semiconductor structures have emerged, making them a research hotspot in the current international frontier. In particular, in the field of VLSI (Very Large Scale Integration), nanowires are highly valued due to their highly scaled down characteristics and short channel control characteristics. [0003] However, at present, each of the prepared nanowires is directly formed on the semiconductor substrate, so that the utilization of the semiconductor substrate is relatively limited. In addition to the nanowires on the substrate, there is also a kind of nanowires formed above the semiconductor substrate, w...

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Problems solved by technology

[0003] However, at present, each of the prepared nanowires is directly formed on the semiconductor substrate, so that the utilization of the semiconductor substrate is relatively limited. In addition to the nanowires on the substrate, there is also a kind of nanowires formed above the semiconductor substrate, which can reduce the area of ​​the semiconductor substrate required to carry the same number of nanowires, and facilitate the manufacture of more semiconductor substrates with the same area. Semiconductor structure for increased integration

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