Manufacturing method of schottky diode with high performance

Abstract

The invention provides a manufacturing method of a schottky diode with high performance; the manufacturing method comprises the following steps of: providing a semiconductor substrate, and sequentially forming a heavily doped layer and a lightly doped layer on the semiconductor substrate; depositing an insulating layer on the lightly doped layer, and forming an insulating layer window above the lightly doped layer; washing the exposed lightly doped layer by adopting a washing solution; depositing a first metal layer on the insulating layer and the lightly doped layer; alloying the first metal layer and the lightly doped layer, and forming an alloying layer between the first metal layer and the lightly doped layer; removing the first metal layer; forming an upper electrode on the alloying layer, wherein the washing solution mainly comprises the following components in percent by weight: 65-75% of phosphoric acid, 5-15% of acetic acid, 1-5% of fluoboric acid and 1-5% of nitric acid. According to the manufacturing method, before the first metal layer of the schottky diode is deposited, the specific washing solution is used for washing and slightly corroding the lightly doped layer so that particles, stains and interface detects remained on the surface are eliminated, a contact junction of a metal semiconductor becomes better, thereby the schottky diode has more efficient and stable performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular, the invention relates to a method for manufacturing a high-performance Schottky diode. Background technique [0002] Diode is an important semiconductor logic device, among which Schottky diode (Schottky) is an important kind of diode. It uses the metal-semiconductor barrier formed by the contact between metal and lightly doped semiconductor to realize switching. Schottky diode has Due to the advantages of high switching frequency and low forward voltage, it is widely used. [0003] Because the principle of the Schottky diode is based on the heterojunction formed between the metal and the semiconductor, the interface factors existing in the formation process of the heterojunction will have a decisive impact on the performance of the Schottky diode, for example, at the interface of the heterojunction If there are impurities, defects or particles on the su...

AI Technical Summary

Problems solved by technology

[0003] Because the principle of the Schottky diode is based on the heterojunction formed between the metal and the semiconductor, the interface factors existing in the formation process of the heterojunction will have a decisive impact on the performance of the Schottky diode, for example, at the interface of the heterojunction If there are impurities, defects or particles on the surface, the performance of the resulting Schottky diode will be poor

Images